Direct detection thin-film bipolar narrow-gap Hg 1−x Cd x Te semiconductor is considered as a waveguide THz/sub-THz bolometer. The response of such thin layer detectors was calculated and measured in the ν = 0.037-1.54 THz frequency range at T ∼ 70-300 K. Noise equivalent power of such detectors can reach NEP 300 K ∼ 4 × 10 −10 W Hz −1/2 and NEP 100 K ∼ 10 −11 in the low-frequency part of the sub-THz spectral range.

In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg 1-x Cd x Te is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3•10-8 W/Hz 1/2 and 5.4•10-9 W/Hz 1/2 at bias current I = 1 mA and I = 0, respectively.

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