Some problems and challenges for applications of uncooled or slightly cooled detectors (not deeper than to 77 K) for sub-THz and THz (terahertz) arrays are briefly discussed. The possibilities to involve detectors based on plasmon resonance FETs (field effect transistors) and those based on warm electron effect narrow-gap semiconductor bolometers are speculated, as they seem to be promising for using in large format broadband arrays of low-cost systems, though they are still in the stage of research and optimization.

Direct detection thin-film bipolar narrow-gap Hg 1−x Cd x Te semiconductor is considered as a waveguide THz/sub-THz bolometer. The response of such thin layer detectors was calculated and measured in the ν = 0.037-1.54 THz frequency range at T ∼ 70-300 K. Noise equivalent power of such detectors can reach NEP 300 K ∼ 4 × 10 −10 W Hz −1/2 and NEP 100 K ∼ 10 −11 in the low-frequency part of the sub-THz spectral range.

Abstract. Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to -radiation have been performed. Resistance-area product characteristics of LWIR n + -p-photodiodes have been investigated using microprobe technique at T  78 K before and after an exposure to various doses of -radiation (Co 60 Gammas). The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.

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