Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Extremely early phases of the catastrophic optical damage (COD) process in 808-nm emitting GaAs/Al 0 .35 Ga 0 .65 As high-power diode lasers are prepared by the application of short single current pulses. Typical energy entries during these pulses are on the order of 100 nJ within several 100 ns. The resulting defect pattern is investigated by high-resolution microscopy. The root of the COD is found to be located at the waveguide of the laser structure. Analysis of material composition modifications as a result of early COD phase points to melting being involved in the process. During recrystallization, an Al-rich pattern is formed that encloses a volume of a few cube micron of severely damaged material.

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“…Some earlier papers [8]- [11], [20] have revealed a similar white line, as visible in Figs. 2 and 5, by TEM analysis of the defect pattern.…”

Section: Nature Of the White Linesupporting

confidence: 73%

Microscopic Origins of Catastrophic Optical Damage in Diode Lasers

Hempel

Tomm

Mattina

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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“…The active parts of the laser are destroyed, intermixing between the different layers was reported by different authors, Chu et al [26] showed that In outdiffusion was the main reason for degradation in strained InGaAs/GaAs lasers. Misfit stress was found to not contribute to the compositional instability in strained InGaAs/GaAs systems [27]; in these cases inter-diffusion can take place by the concentration difference between each side of the interface; a similar consideration can be made for AlGaAs/GaAs systems.…”

Section: Catastrophic Degradationmentioning

confidence: 99%

Laser diode reliability: crystal defects and degradation modes

Jiménez¹

2003

Comptes Rendus. Physique

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Degradation analysis is a crucial issue for the improvement of high power laser diodes. Degradation occurs in three different modes: rapid, gradual and catastrophic. It can be located inside the cavity or at the facet mirrors. Each type of degradation presents its own signature and different crystal defects appear associated with them. The main physical mechanisms responsible for laser degradation are analysed showing the relation between the main degradation modes and the different materials properties of the laser structures.

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“…A similar dependence was also observed for the threshold current of edge emitting lasers using similar InGaAs/GaAs strained quantum wells. 9 Chu et al 10 Traditionally, others have not considered the initial test period where faster degradation occurs in determining the EOL. The lifetime is estimated using a linear extrapolation (i.e., assuming a constant degradation rate) applied after an arbitrary initial degradation period.…”

Section: Failure Modementioning

confidence: 99%

Reliability of 980-nm laser diodes based on Novalux extended-cavity surface-emitting laser (NECSEL) concept

et al. 2004

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The reliability of novel, electrically pumped, vertical cavity 980-nm InGaAs lasers is demonstrated through accelerated life testing (ALT). The ALT methodology is used to detect failure modes as well as to obtain failure statistics. The time-to-failure (TTF) distribution and acceleration model are determined from over 200 devices tested from multiple wafers and assembly lots to account for process variation. The failure mode observed was gradual power degradation, while all other laser diode characteristics, e.g., threshold current, operating current and wavelength, remained stable. Laser output power degraded linearly in t 1/2 , where t is the stress time. The acceleration model best fitting the data is Black's equation with thermal activation energy of 0.89 eV and current density coefficient of 2.9. Verification of the acceleration model was confirmed through life testing over 500 devices at field operating conditions. The high level of reliability demonstrated meets strict telecommunications requirements.

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Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Abstract: The effects of interdiffusion on the subbands in Ga x In 1−x N 0.04 As 0.96 / GaAs quantum well for 1.3 and 1.55 μm operation wavelengths J. Appl. Phys. 90, 197 (2001); 10.1063/1.1370110High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers

Cited by 15 publications

References 17 publications

Microscopic Origins of Catastrophic Optical Damage in Diode Lasers

Microscopic Origins of Catastrophic Optical Damage in Diode Lasers

Laser diode reliability: crystal defects and degradation modes

Reliability of 980-nm laser diodes based on Novalux extended-cavity surface-emitting laser (NECSEL) concept

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