Interlayer interaction could substantially
affect the electrical
transport in transition metal dichalcogenides, serving as an effective
way to control the device performance. However, it is still challenging
to utilize interlayer interaction in weakly interlayer-coupled materials
such as pristine MoS2 to realize layer-dependent tunable
transport behavior. Here, we demonstrate that, by substitutional doping
of vanadium atoms in the Mo sites of the MoS2 lattice,
the vanadium-doped monolayer MoS2 device exhibits an ambipolar
field effect characteristic, while its bilayer device demonstrates
a heavy p-type field effect feature, in sharp contrast
to the pristine monolayer and bilayer MoS2 devices, both
of which show similar n-type electrical transport
behaviors. Moreover, the electrical conductance of the doped bilayer
MoS2 device is drastically enhanced with respect to that
of the doped monolayer MoS2 device. Employing first-principle
calculations, we reveal that such striking behaviors arise from the
presence of electrical transport networks associated with the enhanced
interlayer hybridization of S-3p
z
orbitals
between adjacent layers activated by vanadium dopants in the bilayer
MoS2, which is nevertheless absent in its monolayer counterpart.
Our work highlights that the effect of dopant not only is confined
in the in-plane electrical transport behavior but also could be used
to activate out-of-plane interaction between adjacent layers in tailoring
the electrical transport of the bilayer transitional metal dichalcogenides,
which may bring different applications in electronic and optoelectronic
devices.