GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Gorokhov, E. B.; Astankova, K. N.; Komonov, A. I.

doi:10.5772/53481

Cited by 7 publications

(3 citation statements)

References 36 publications

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“…The GeÀGe peak is also broad and centred at ñ = 280 cm À1 , which corresponds well with the formation of an amorphous phase. [28] The SiÀGe peak at ñ % 410 cm À1 is more or less consistent with that reported in the literature (for Si 0.5 Ge 0.5 , the SiÀGe peak occurred at ñ = 407 cm…”

Section: Resultssupporting

confidence: 78%

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

et al. 2015

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In this paper, we show the electrodeposition of both gallium‐doped crystalline germanium and SixGe1−x directly on copper at room temperature from an ionic liquid. Germanium and SixGe1−x were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium‐doped germanium and SixGe1−x. From the microstructure, it appears that Ge and SixGe1−x dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X‐ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium‐doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.

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Section: Resultssupporting

confidence: 78%

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

et al. 2015

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“…As for FTIR results, only chemical bonding of GeS is found before the SCF treatment. However, more intensive peaks of GeO bonding are obtained at 470 and 610 cm −1 wavenumbers, respectively . The FTIR result indicates that the original GeS film attains GeO properties through the water‐supplemented scCO 2 SCF oxidation treatment.…”

mentioning

confidence: 92%

Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique

Yang

Chen

Shih

et al. 2018

Adv Materials Inter

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In this study, an oxidation treatment technique suitable for the material and electronic device applications proceeding at low temperature (only 80 °C) and high pressure (3000 psi) utilizing a carbon dioxide (CO2) supercritical fluid (SCF), also known as scCO2, which is supplemented with water molecules, is reported. To demonstrate the possible effects on material and devices for the proposed SCF treatment, an amorphous germanium–sulfur (GeS) thin film and a GeS‐based resistance random access memory (RRAM) device are prepared. After the SCF treatment, electrical measurements confirm that the GeS‐based RRAM device exhibits a lower forming voltage, more stable resistance switching characteristics, and higher concentration distributions of high and low resistance states when compared to the device without SCF treatment. As for the material effects, both chemical and physical properties are examined based on material analyses results. It is concluded that the original amorphous GeS thin film transforms to a polycrystallized GeO film, confirmed by a reaction model for the SCF treatment illustrating possible oxidation and crystallization effects induced by this SCF treatment. This water‐enhanced scCO2 SCF treatment technique, thus, shows its capability as a feasible synthetic method for material modification as well as suitability for device level applications.

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“…This implies the production of ncGe originates mainly from the thermally induced disproportionation and crystallization reaction that occurs at higher temperatures [Eq. ( 3)]: [19] 2 GeO…”

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confidence: 99%

Size‐Tunable Photothermal Germanium Nanocrystals

et al. 2017

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Germanium nanocrystals (ncGe) have not received as much attention as silicon nanocrystals (ncSi). However, Ge has demonstrated superiority over Si nanomaterials in some applications. Examples include, high charge–discharge rate lithium‐ion batteries, small band‐gap opto‐electronic devices, and photo‐therapeutics. When stabilized in an oxide matrix (ncGe/GeOx), its high charge‐retention has enabled non‐volatile memories. It has also found utility as a high‐capacity anode material for Li‐ion batteries with impressive stability. Herein, we report an organic‐free synthesis of size‐controlled ncGe in a GeOx matrix as well as freestanding ncGe, via the thermal disproportionation of GeO prepared from thermally induced dehydration of Ge(OH)2. The photothermal effect of ncGe, quantified by Raman spectroscopy, is found to be size dependent and superior to ncSi. This advance suggests applications of ncGe in photothermal therapy, desalination, and catalysis.

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GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Cited by 7 publications

References 36 publications

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique

Size‐Tunable Photothermal Germanium Nanocrystals

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GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses

Cited by 7 publications

References 36 publications

Electrodeposition of Crystalline Gallium‐Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature

Electrodeposition of Crystalline Gallium‐Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature

Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique

Size‐Tunable Photothermal Germanium Nanocrystals

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Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature