Geometric characteristics of silicon cavities etched in EDP

Abstract

Etching characteristics of hexagonal and triangular cavities on a ⟨1 1 1⟩-oriented silicon wafer in the etchant of ethylene diamine, pyrocatechol and water (EDP/EPW) were investigated. The patterns are aligned to keep the sides perpendicular to ⟨1 1 0⟩ crystal orientations, in order that the sidewalls of cavities are parallel to {1 1 0} crystalline planes. RIE-ICP etching is used to define the depth of the triangular and hexagonal cavities, and EDP etching is followed for different etching times. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns and the depth of cavities in the wafer. The etching process of the hexagon and triangle cavities is modeled, based on the crystal structure and wet etching principle. The results of etched cavities confirm the condition to determine the final etching profiles.

Surface tension and its role for vertical wet etching of silicon

“…In recent decades, many different alkaline solutions have been described [4][5][6][7]. Results reported from the variation of the hydroxide concentration alone [8][9][10][11] show that the surface tension of etching solutions may be an important factor for monitoring the etching process.…”