Geometric manipulation of the high-field linear magnetoresistance in InSb epilayers on GaAs (001)

Branford, W. R.; Husmann, Anke; Solin, S. A.; Clowes, S. K.; Zhang, T.; Bugoslavsky, Y.; Cohen, L. F.

doi:10.1063/1.1923755

Cited by 34 publications

(30 citation statements)

References 17 publications

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“…The high-field quasilinear magnetoresistance has previously been observed in InSb epilayers and is attributed to the intrinsic magnetoresistance originating from sample inhomogeneities. 22,26 …”

Section: Resultsmentioning

confidence: 99%

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

et al. 2009

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We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m 2 V −1 s −1 . Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in spin populations inferred from fast Fourier transforms of the data. The influence of Landau level broadening and spin-dependent scattering rates are investigated by magnetoconductance simulations, which provide key signatures that we were able to verify by experimental observation. These results demonstrate that in addition to the large Zeeman splitting, the combination of large and spin-dependent broadening is the significant parameter in controlling the appearance of beating in these structures.

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Section: Resultsmentioning

confidence: 99%

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

et al. 2009

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“…4 We attribute the observed anomalous magnetic field dependences in the InAs epilayers to the surface state property of InAs, which tends to form a strong charge accumulation with a sheet density of $10 12 cm À2 on the free surface, independent of doping, caused by native surface defects. 19,20 Hence, the surface accumulation layer with high carrier concentration acts as a parallel transport channel, and therefore, a multi-layer conducting model needs to be employed.…”

Section: A Magnetic Field Dependencementioning

confidence: 99%

“…In addition, the magnetotransport property shows dependence on the geometry, e.g., the shape of the device and the placements of the electric contacts, [3][4][5] resulting in the socalled geometric MR. This physical phenomenon arises from the Lorentz force exerted by the magnetic field, which points perpendicular to the direction of the moving charge carriers and deflects them by the Hall angle of arctan (lB), where l denotes mobility.…”

Section: Introductionmentioning

confidence: 99%

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Sun

Soh

Kosel

2013

Journal of Applied Physics

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We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler's rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler's rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

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“…Several mechanisms have been suggested to explain this behavior from geometrical [22], classical [23][24][25], quantum [26,27], and effective medium [28,29] perspectives.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of doped silicon

et al. 2015

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We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.

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Geometric manipulation of the high-field linear magnetoresistance in InSb epilayers on GaAs (001)

Cited by 34 publications

References 17 publications

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

Geometric factors in the magnetoresistance of n-doped InAs epilayers

Magnetoresistance of doped silicon

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