Geometric modeling of homoepitaxial CVD diamond growth: I. The {100}{111}{110}{113} system

Silva, F.; Bonnin, X.; Achard, Jocelyn; Brinza, Ovidiu; Michau, Armelle; Gicquel, A.

doi:10.1016/j.jcrysgro.2007.09.044

Cited by 61 publications

(51 citation statements)

References 21 publications

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“…The growth of thick CVD diamond film (few hundreds of micrometers) from a (100)‐oriented substrate, is usually accompanied by the appearance of other crystalline faces such as {110}, {111} and {113} at the edges and corners of the crystal. To predict the evolution of such faces with the growth of the film, a 3D crystal growth model has been developed 10, 11. In this model, the crystal shape is described by three parameters ( α , β and γ ) which correspond to the displacement speeds of the {111}, {110} and {113} faces, normalized to the {100} displacement speed.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Issaoui

Achard

Silva

et al. 2011

Physica Status Solidi (a)

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The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces growth rate with respect to each others. Three parameters (α, β and γ) which correspond to the displacement speeds of the {111}, {110} and {113} faces, normalized to the {100} displacement speed can be used into a 3D crystal growth model in order to predict the final crystal morphology. This model has been applied with success to intrinsic diamond, and is extended here to the growth of boron doped diamond. It is found that the addition of diborane gas promotes the appearance of large {110} and {113} faces limiting the usable top surface area and generally leading to stress and consequently to crystal breaking‐up. By adding a small amount of oxygen (0.25%) to the feed gas, the {110} faces appearance can be inhibited and the crystal integrity preserved.

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Section: Introductionmentioning

confidence: 99%

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Issaoui

Achard

Silva

et al. 2011

Physica Status Solidi (a)

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“…An approach to this problem was developed by researchers at the Laboratory of Materials Science, Universit e Paris Sud 13 (France) [60]. The evolution of the morphological structure of the crystals during their growth depends on the growth rate V of the main low-index faces, such as {100} and {111}, as well as {110} and {311}.…”

Section: Growth Of Single-crystal Diamond By Chemical Vapor Depositionmentioning

confidence: 99%

“…Qualitative diagram of the equilibrium shapes of crystals that can be grown from the starting cubic {100} substrate in the space of a, b, and g parameters (taken from Ref. [60]; faces are colored as described in Fig. 3d).…”

Section: Growth Of Single-crystal Diamond By Chemical Vapor Depositionmentioning

confidence: 99%

Prospects for the synthesis of large single-crystal diamonds

Khmelnitskiy¹

2015

Phys.-Usp.

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The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require largesize (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates.

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“…Intense modeling of MPCVD reactors and morphology development under different ambient conditions have progressively provided an important understanding of diamond growth [51,52]. An enormous set of parameters (electromagnetic fields in the reaction chamber, gas heating, heat and mass transfer, charged and neutral species involved, real source gas mixtures (i.e.…”

Section: Microwave Plasma Chemical Vapor Deposition Of Diamondmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Geometric modeling of homoepitaxial CVD diamond growth: I. The {100}{111}{110}{113} system

Cited by 61 publications

References 21 publications

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Prospects for the synthesis of large single-crystal diamonds

Novel Single Photon Emitters Based on Color Centers in Diamond

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