Germanium avalanche receiver for low power interconnects

Virot, L.; Crozat, P.; Fédéli, Jean-Marc; Hartmann, Jean‐Michel; Marris‐Morini, Delphine; Cassan, Éric; Bœuf, F.; Vivien, Laurent

doi:10.1038/ncomms5957

Cited by 126 publications

(86 citation statements)

References 35 publications

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“…However, the large dark current of the MSM device and poor primary responsivity strongly limited the receiver sensitivity. Recently, a lateral PIN junction based Ge waveguide APD with gain larger than 10 at a bias voltage of -7V was reported in [7]. The device shows a low dark current of 18nA at -1V.…”

Section: Introductionmentioning

confidence: 99%

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High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

et al. 2015

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Abstract:We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain×bandwidth product above 100GHz. A photonic receiver based on such a Ge APD, including a 0.13µm SiGe BiCMOS low-noise trans-impedance amplifier and a limiting amplifier, is realized. A 5.8dB sensitivity improvement is demonstrated at -5.9V bias at an avalanche gain of 6 through bit error ratio measurements. The absolute sensitivity in avalanche mode is -23.4dBm and -24.4dBm at a bit error ratio of 1×10-12 and 1×10 -9 respectively. ©2014 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

“…The device shows a low dark current of 18nA at -1V. However, [7] neither demonstrates the sensitivity improvement through bit error rate measurements nor characterizes the avalanche excess noise performance of the device.…”

Section: Introductionmentioning

confidence: 99%

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

et al. 2015

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“…This indicates that C < 1 fF is required when considering R load > 10 kΩ and f BW 10 GHz. Recent Gewaveguide PDs have exhibited a junction capacitance of 4-5 fF [17,18], which does not meet this requirement. As a consequence, we need to reduce the capacitance of the PD to less than 1 fF to achieve both a high light-to-voltage conversion and a high bandwidth with a resistor-loaded configuration without any signal amplifiers.…”

Section: Research Articlementioning

confidence: 99%

“…L abs is the InGaAs absorber length, which equals the junction length. The parallel-plate capacitance is less than 0.2 fF for L abs < 3.4 μm thanks to the ultrasmall dimensions, and is much smaller than those of the Ge-waveguide PDs with 4-5 fF [17,18]. However, for an ultrasmall junction, the fringing field contribution of the junction also becomes significant, and hence it is important to include the fringe capacitance [20].…”

Section: Research Articlementioning

confidence: 99%

Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

Nozaki¹,

Matsuo²,

Fujii³

et al. 2016

Optica

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The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 μm and a capacitance of less than 1 fF. Despite the small size of the device, a high responsivity of 1 A/W and a clear 40 Gbit/s eye diagram are observed, overcoming the conventional trade-off between size and responsivity. A resistor-loaded PD was actually fabricated for light-to-voltage conversion, and a kilo-volt/watt efficiency with a gigahertz bandwidth even without amplifiers was measured with an electro-optic probe. Combined experimental and theoretical results reveal that a bandwidth in excess of 10 GHz can be expected, leading to an ultralow energy consumption of less than 1 fJ/bit for the photoreceiver. Amplifier-less PDs with attractive performance levels are therefore feasible and a step toward a densely integrated photonic network/processor on a chip.

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“…To exceed these conventional receivers with resistor-loaded receiver in terms of EBP, C should be lower than 1 fF. Recent Ge-waveguide PDs have exhibited a capacitance of 4-5 fF [18], [19], which does not meet this requirement.…”

Section: Requirement For Resistor-loaded Photoreceivermentioning

confidence: 99%

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Nozaki

Matsuo

Takeda

et al. 2017

IEICE Trans. Electron.

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SUMMARYAn ultra-compact InGaAs photodetector (PD) is demonstrated based on a photonic crystal (PhC) waveguide to meet the demand for a photoreceiver for future dense photonic integration. Although the PhC-PD has a length of only 1.7 μm and a capacitance of less than 1 fF, a high responsivity of 1 A/W was observed both theoretically and experimentally. This low capacitance PD allows us to expect a resistor-loaded receiver to be realized that requires no electrical amplifiers. We fabricated a resistor-loaded PhC-PD for light-to-voltage conversion, and demonstrated a kV/W efficiency with a GHz bandwidth without using amplifiers. This will lead to a photoreceiver with an ultralow energy consumption of less than 1 fJ/bit, which is a step along the road to achieving a dense photonic network and processor on a chip. key words: photonic crystal waveguide, photodetector, buried heterostructure, optical interconnection

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Germanium avalanche receiver for low power interconnects

Cited by 126 publications

References 35 publications

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

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