2015
DOI: 10.1364/oe.23.000815
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High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

Abstract: Abstract:We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain×bandwidth product above 100GHz. A photonic receiver based on such a Ge APD, including a 0.13µm SiGe BiCMOS low-noise trans-impedance amplifier and a limiting amplifier, is realized. A 5.8dB sensitivity improvement is demonstrated at -5.9V bias at an avalanche gain of 6 through bit error ratio measurements. The absolute sensitivity in avalanche mode is -23.4dBm and -24.4dBm at a bit error ratio of 1×10-12 and 1×1… Show more

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Cited by 66 publications
(37 citation statements)
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References 20 publications
(24 reference statements)
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“…To monitor the local operation of a chip it is possible to incorporate photodetectors. These can be classical photodetectors, but they should be mounted that they introduce only a small power penalty. They can use a fractional tap waveguide, or they can be incorporated on a waveguide where the power needs to be minimized.…”
Section: Challenges For An Integrated Photonic Design Flowmentioning
confidence: 99%
“…To monitor the local operation of a chip it is possible to incorporate photodetectors. These can be classical photodetectors, but they should be mounted that they introduce only a small power penalty. They can use a fractional tap waveguide, or they can be incorporated on a waveguide where the power needs to be minimized.…”
Section: Challenges For An Integrated Photonic Design Flowmentioning
confidence: 99%
“…Because of that, extra electronic stages with trans-impedance amplifiers (TIA) or limiting amplifiers (LA) are typically attached to the devices. Improved performance photo-detectors can be obtained by switching over to devices that exploit an internal multiplication gain 1,14,[40][41][42][43][44][45][46][47][48] , i.e. on-chip avalanche photodetectors (APDs).…”
Section: Introductionmentioning
confidence: 99%
“…A tranceiver's power consumption is largely determined by the sensitivity of its optical system, in which a p-i-n photodiode is often used due to its low operation voltage despite avalanche photodiodes provide better sensitivities. Although Ge-only APDs have been recently reported to operate at voltages below 10V [1]- [3], they often suffer from the low gain-bandwidth product (GBP) (low bandwidth at high gain) due to the near-unity impact ionization coefficient ratio of germanium -a non-ideal material for APDs. On the other hand, Si-Ge avalanche photodiodes, which uses silicon as the avalanche multiplication region, have consistently shown over 300GHz gain-bandwidth product and 10dB better sensitivity than p-i-n receivers [4], [5].…”
Section: Introductionmentioning
confidence: 99%