Germanium diffusion in aluminium: connection between point defect parameters with bulk properties

Abstract

The understanding of dopant diffusion and its temperature dependance is technologically important in metals. As a model system we consider germanium diffusion in aluminium. This is an appropriate system as germanium does not form intermetallic compounds in aluminium and therefore it simplifies the investigation of its diffusion behavior. Here we use experimental elastic and expansivity data to derive the germanium diffusion coefficient in aluminium in the framework of the so-called cBΩ model, between 673 K to 883 K. This model is a powerful way to study point defect parameters in metals as it connects them to bulk properties, which are more easily accessible. The calculated diffusivities are in excellent agreement with the experimental data.

Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding

“…With the applied thermal budget Ru compatibility with bonding is high. However, as elements diffuse and compete to form alloys it should be noted that they will not always compete on equal footing: although Ge/Si interdiffusion is also not competitive with Ge diffusion into Al [25], [26] the slower process can compete when it starts before Ge exposure to Al. It is then possible to imagine scenarios where Ru becomes competitive and inhibitory for bonding due to earlier diffusion.…”

Toward Defect Engineering Strategies to Optimize Energy and Electronic Materials

“…In the cBΩ model, the defect Gibbs energy is assumed to be proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). Recent advances in computational materials science and experimental techniques have regenerated the interest in its use to predict defect processes under extreme conditions [110][111][112][113][114][115][116][117][118][119].…”

Connecting point defect parameters with bulk properties to describe diffusion in solids

“…Studies performed in the previous decades have established the efficacy of the cBX model in describing defect processes for numerous materials, including alkali and silver halides, PbF 2 , AgI, nuclear fuels, gallium arsenide a) (GaAs), germanium (Ge), diamond, olivine, ZnO, LiH, silicon (Si), and others. [21][22][23][24][25][26][27][28][29][30] The present review is mainly focused on the application of the cBX model and, in particular, on the interconnection between point defect parameters in solids and bulk properties. The focus is on calculating self-and dopant diffusion properties in systems where limited experimental data are available.…”