Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Chen, Jiahe; Yang, Deren; Li, Hong; Ma, Xiangyang; Que, Duanlin

doi:10.1016/j.jcrysgro.2006.03.013

Cited by 19 publications

(12 citation statements)

References 24 publications

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“…6. As can be seen, the oxygen precipitates with higher density and smaller sizes could also be formed in the GCz-Si wafers after such CFA treatment, which was believed to be based on the assumption of germanium-related complexes [10]. For CzSi case, after such prolonged RTA cycle, the size of oxygen precipitate could be dissolved partly while the density of oxygen precipitate remained.…”

Section: Article In Pressmentioning

confidence: 85%

“…It has been proposed that the large-sized high-density oxygen precipitates could be generated in grown-in GCz-Si crystals at elevated temperatures. Meanwhile, such oxygen precipitates were believed to be of the mixed morphology consisting of platelets and polyhedrons shapes [10]. It is considered that the germanium doping in Cz-Si would probably decline the thermal stability of grown-in oxygen precipitates by generating the platelet shape precipitates.…”

Section: Methodsmentioning

confidence: 99%

“…Meanwhile, the enhanced oxygen precipitation in germanium-doped Cz-Si (GCz-Si) has been reported, while the intrinsic gettering capability for metallic contamination has also been believed to be promoted [8,9]. It is therefore believed that GCz-Si is of technological importance in microelectronics industry [10,11]. However, the behavior of oxygen precipitates in GCz-Si has not been substantially clear, especially under rapid thermal annealing (RTA), which has been applied widely in modern device fabrication.…”

Section: Introductionmentioning

confidence: 99%

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Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Chen

Yang

et al. 2007

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 85%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Chen

Yang

et al. 2007

Journal of Crystal Growth

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“…Such Ge-related complexes could act as nucleation center of grown-in oxygen precipitates and result in the higher density of oxygen precipitates in GCZ Si compared to that in CZ Si during the cooling-down process [19]. These grown-in oxygen precipitates could become the strong pinning sites for the dislocations during the dislocation multiplications for wafer breakdown [11].…”

Section: Resultsmentioning

confidence: 99%

Characterization of a Czochralski grown silicon crystal doped with 10²⁰ cm^‐3 germanium

Chen

et al. 2010

Cryst. Res. Technol.

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A dislocation-free silicon single crystal doped with 10 20 cm -3 germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seed-end and tang-end of the crystal was 8×1019 cm -3 and 1.6×10 20 cm -3 , respectively. The effective segregation coefficient of Ge, the distribution of flow pattern defects (FPDs) and the wafer warpage have been characterized. Both the effective segregation coefficient and the equilibrium segregation coefficient of Ge in silicon were evaluated. Then, the density of FPDs was traced from seed-end to tang-end of the ingot, a suppression of FPDs by Ge doping was shown. That is probably because the Ge atoms consume free vacancies and thus a higher density of smaller voids is formed. Furthermore, the mechanical strength of wafers has also been characterized by batch warpage analysis. The warpage in the seed-end was larger than that in the tang-end of the ingot, showing that the mechanical strength of wafers is enhanced by Ge doping. Such improvement is interpreted by an enhanced dislocation pinning effect associated with the enhanced nucleation of grown-in oxygen precipitates in the Gedoped silicon wafers.

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“…] 0 for CZ and GCZ silicon wafers subjected to 1270 • C/2h anneal [48] @Copyright 2006 Elsevier [48] Figure 3 (Color online) Decreases in interstitial oxygen concentration in CZ and GCZ silicon wafers subjected to the cooling from 1270 • C to different terminal temperatures with a rate of 0.5 • C/min [48]…”

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confidence: 99%

Impurity engineering of Czochralski silicon: effects of germanium-doping

Sun¹,

Chen²,

Yu³

et al. 2019

Sci. Sin.-Inf.

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In the past decades, Czocharalski (CZ) silicon has been extensively and intensively studied as the base material for manufacturing integrated circuits (ICs). The defects and mechanical strength of CZ silicon significantly influence the manufacturing yield of ICs. Traditionally, studies have considered that the impurities, except the electrically active dopants and inevitable oxygen in CZ silicon, should be as few as possible. From this viewpoint, the defect control and improvement in mechanical strength essentially rely on the optimization of crystal growth conditions. To overcome the aforementioned restrictions, this study aims to propose the impurity engineering of CZ silicon, which indicates that co-doping a specific impurity into the CZ silicon can manipulate the behavior of extended defects owing to the interaction of point defects and such impurity atoms and thus improve the mechanical strength of CZ silicon. Herein, the research background and significance of impurity engineering of CZ silicon are first elucidated. Then, the effects of germanium-doping into CZ silicon, representing a case study of impurity engineering, are overviewed. Such effects involve the influences on the formation of defects, including the oxygen precipitates and voids, which are advantageous for fabricating ICs, and the improvement of mechanical strength of CZ silicon.

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Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Cited by 19 publications

References 24 publications

Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Characterization of a Czochralski grown silicon crystal doped with 10²⁰ cm^‐3 germanium

Impurity engineering of Czochralski silicon: effects of germanium-doping

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Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Cited by 19 publications

References 24 publications

Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Characterization of a Czochralski grown silicon crystal doped with 1020 cm‐3 germanium

Impurity engineering of Czochralski silicon: effects of germanium-doping

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Characterization of a Czochralski grown silicon crystal doped with 10²⁰ cm^‐3 germanium