Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility

Li, Feng; Liu, Xiuhong; Wang, Yu; Li, Yafei

doi:10.1039/c6tc00454g

Cited by 240 publications

(147 citation statements)

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“…With this information in mind, we further calculated the band structures of the heterostructures as well as the single components of GeS and BP, as illustrated in Figure . The bandgaps of GeS and BP at the natural states are calculated to be 2.32 and 1.51 eV at the Heyd–Scuseria–Ernzerhof (HSE06) level of theory, which are consistent with the results calculated at the same level . The band structures of GeS and BP at the stressed states are shown in Figure a–d, where their bandgaps are found to change into 1.95 and 1.66 eV for 1L‐GeS/BP and 1.65 and 1.69 eV for 2L‐GeS/BP, respectively.…”

Section: Resultssupporting

confidence: 79%

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

Wang

Peng

Qian

et al. 2018

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Van der Waals (vdW) heterostructures, which have the advantage of integrating excellent properties of the stacked 2D materials by vdW interactions, have gained increasing attention recently. In this work, within the framework of density functional theory calculations, the electronic properties of vdW heterostructure composed of phosphorene (BP) in black phosphorus phase and GeS monolayer are systematically explored. The results show that the carriers are not separated for both lattice-match and lattice-mismatch heterostructures. For the lattice-match heterostructure, it is found that changing monolayer of GeS to bilayer can increase the energy difference of valence band offsets between GeS and BP, thus realizing electron-hole separation. For the lattice-mismatch heterostructure, altering the layer distance can transform the heterostructure into a typical type-I alignment, but applying the electric field or doping with 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-tetracyanoquinodimethane (F4TCNQ) can make it display a perfect desirable type-II alignment, where holes migration and electrons transfer are revealed to account respectively for the phenomenon of carrier separation. It is believed that the work would greatly enlarge the potential application of the BP-based heterostructures in photoelectronics and further stimulate the investigation enthusiasms on other fashionable heterostructures and even unassuming heterostructures in which the charming electronic properties can be modulated to emerge by various general methods.

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Section: Resultssupporting

confidence: 79%

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

Wang

Peng

Qian

et al. 2018

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“…The separation distance ∆ d is defined as d − d 0 ( d 0 : the equilibrium interlayer distance). As shown in Figure a, the cleavage energy increases with the separation distance, and reaches its maximum value (0.65 J m −2 ) at ∆ d ≈ 3.5 Å, which is comparable with that of graphene exfoliated from graphite (0.37 J m −2 ) and monolayer GeS from its 3D layered counterpart (0.52 J m −2 ) . Moreover, we note that the cleavage energy of Ca 3 Sn 2 S 7 (0.65 J m −2 ) is much smaller than that of Ca 2 N exfoliated from 3D layered crystals (1.09 J m −2 ) by using liquid exfoliation .…”

Section: The Calculated Carrier Mobility μ Together With the Deformatmentioning

confidence: 56%

2D Ca₃Sn₂S₇ Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 10⁴ cm² V⁻¹ s⁻¹

Shi

2019

Advanced Materials

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Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (104–105 cm2 V−1 s−1). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor Ca3Sn2S7 is found based on first‐principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m0), ultrahigh room‐temperature carrier mobility (6.7 × 104 cm2 V−1 s−1), Fermi velocity (3 × 105 m s−1), and optical absorption coefficient (105 cm−1). Particularly, it has a direct quasi‐particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high‐speed electronic devices.

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“…The IV‐VI compound has the same unique orthogonal lattice structure as B‐P (Figure H‐J) and strong anisotropic characteristics . The adjustable bandgap, high electron mobility, and good optical response, light absorption, and other characteristics make these 2D semiconductors have good application value in the field of optoelectronics . Figure G shows the relationship between the S or Sn content x and the bandgap of Sn x Ge 1‐x S, Sn x Ge 1‐x Se, GeS x Se 1‐x , and SnS x Se 1‐x alloys.…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…In addition, there are three widely studied 2D layered metal chalcogenides, 24,25,39,[51][52][53][54][55][56][57][58][59][60] including III-VI compounds (such as InSe and GaS), IV-VI compounds (such as SnS and GeSe), and V-VI compounds (such as Sb 2 S 3 , Sb 2 Se 3 , and Bi 2 S 3 ). And, IV-VII group semiconductor layered material (eg, PbI 2 and so on) also widely studied.…”

Section: Other Types Of 2d Layered Compound Semiconductorsmentioning

confidence: 99%

“…42,69 The adjustable bandgap, high electron mobility, and good optical response, light absorption, and other characteristics make these 2D semiconductors have good application value in the field of optoelectronics. 55,[70][71][72][73] Figure 3G shows the relationship between the S or Sn content x and the bandgap of Sn x Ge 1-x S, Sn x Ge 1-x Se, GeS x Se 1-x , and SnS x Se 1-x alloys. Finally, they collectively achieved bandgap tuning from 0.9 to 1.6 eV.…”

Section: Other Types Of 2d Layered Compound Semiconductorsmentioning

confidence: 99%

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Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

130

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility

Abstract: GeS monolayer is semiconducting with a moderate band gap and it also has rather high carrier mobilities.

Cited by 240 publications

References 50 publications

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

2D Ca₃Sn₂S₇ Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 10⁴ cm² V⁻¹ s⁻¹

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility

Abstract: GeS monolayer is semiconducting with a moderate band gap and it also has rather high carrier mobilities.

Cited by 240 publications

References 50 publications

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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2D Ca₃Sn₂S₇ Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 10⁴ cm² V⁻¹ s⁻¹