Germanium-on-Silicon for Integrated Silicon Photonics

Sun, Xiaochen

doi:10.5772/25662

Cited by 4 publications

(5 citation statements)

References 93 publications

(90 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the simulations we have assumed W = 900 nm, h 1 = 220 nm, H i = 1300 nm, τ n = τ p = 7.8 ns, and Δ E t = 0.25 and 0.135 eV in the multiplication layer and at the GeSn/Si interface (threading dislocation), respectively. According to ref , the traps at the GeSn/Si interface, induced by the threading dislocations, can be characterized by a cross section σ = 1 × 10 –15 cm 2 and N L = 10 7 cm –1 . The curves clearly indicate the avalanche effect with V br estimated as 45 V. In Figure a, the case related to Ge on Si with N T = 10 6 cm –2 is included for comparison.…”

Section: Spad Simulation Resultsmentioning

confidence: 99%

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

Soref

Leonardis

Passaro

2019

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Photonic qubits can represent an ideal choice in quantum information science since photons travel at the speed of light and interact weakly with the environment over long distances. In this context, technological platforms allowing the development and implementation of chip-scale integrated photonics represent a possible solution toward scalable quantum networking schemes. However, at present, most examples of integrated quantum photonics still require the coupling of light to external photodetectors operating at very low temperatures. In this paper, we demonstrate that the GeSn/Si-in-SOI technological platform can be a good candidate to realize integrated single-photon avalanche detectors (SPADs), operating at room temperature. Thus, we report the design and simulation of waveguide-based SPADs for operation at 1550 and 2000 nm wavelengths. We calculate the breakdown voltage, the dark count rate (DCR), the single photon detection efficiency (SPDE), the noise equivalent power (NEP), the dark count, and the afterpulsing probabilities by simulating the avalanche process and the statistical features in a self-consistent way. The PIPIN SPAD performance parameters are estimated as a function of the GeSn’s threading dislocation density and of the temperature. We also demonstrate that for operation at 1550 and 2000 nm wavelengths with the 220 nm GeSn separate absorber film centered in the 250 nm high Si waveguide end, it is possible to cover a number of applications at room or near room temperature, ranging from ultrasensitive LIDAR to quantum communications, metrology, sensing, and key distribution.

show abstract

Section: Spad Simulation Resultsmentioning

confidence: 99%

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

Soref

Leonardis

Passaro

2019

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…Due to its inherent properties of superior carrier mobilities, low band-gap and compatibility with silicon processes, Ge is regarded as one of the most promising materials for a broad range of applications like new-generation of complementarymetal oxide semiconductors (CMOS) [1], high-efficiency multijunction solar cells [2], low-cost thermophotovoltaic (TPV) devices [3,4] or High-Purity Ge [5] and infrared (IR) detectors [6]. In addition, the possibility of behaving as a pseudo direct bandgap material when subjected to high tensile strain and high n-type doping (>10 19 cm −3 ) [7,8] has opened the door to some other potential applications in the fields of spintronics [9], IR emitting lasers [10,11] and LEDs [12,13].…”

Section: Introductionmentioning

confidence: 99%

N-type doping of Ge by P spin on dopant and pulsed laser melting

Jiménez

Carturan

Milazzo

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

N-type doping of Ge based on spin on dopant sources and pulsed laser melting has been proposed as an alternative to the use of complex and expensive techniques such as ionimplantation or molecular beam epitaxy. Optimization of the n+/p junction has been carried out with a KrF laser (of 22 ns pulse duration) by studying the effect of different laser fluences and the number of pulses. The diffusion profiles, sheet resistance, carrier density and mobility have been determined by secondary ion mass spectrometry and Van der Pauw-Hall measurements. By properly selecting the range of laser energy density and number of pulses, a high level of activation (>10 19 cm −3 ) with good mobility (350-450 cm 2 V −1 s −1 ) and low sheet resistance (<50 Ω/,) has been achieved. In addition, the good crystalline quality of the samples has been confirmed by high-resolution x-ray diffraction measurements, demonstrating the viability of such a low-cost manufacturing process for next generation Ge-based devices.

show abstract

“…In order to meet the unprecedented demands for advanced highspeed semiconductor devices, silicon-based materials such as siliconon-insulator (SOI) and silicon on sapphire (SOS) substrates have attracted considerable interest due to significant transformation of their optical and electrical properties caused by quantum-confinement effects. Silicon is an excellent material system for optical confinement and wave transmission in the near infrared range 1 and SiO 2 has good compatibility with the existing CMOS technology for microelectronics and photonics. 2 High quality Ge crystals have been used for highly sensitive near-infrared (NIR) photodetectors in the radiation wavelength of 1300-1600 nm, 3 and exhibit significant absorption in the telecommunication wavelengths range.…”

Section: Introductionmentioning

confidence: 99%

Simulation of optical properties of semiconductor multilayers from extreme ultraviolet to far infrared

Nm¹

2020

MSEIJ

View full text Add to dashboard Cite

Optical properties of semiconductors play a critical role in various applications including the design and manufacture of optical components, devices & sources, energy conversion and process monitoring & control. While the fundamental understanding of the optical properties of semiconductors has grown over the years, reliable data of the optical constants of semiconductors, particularly in the infrared range of wavelengths, is severely lacking in the literature. In this overview, detailed case studies of the optical properties of Silicon on Insulator (SOI) and Ge photodetectors, based on Forouhi-Bloomer dispersion equation, as function of photon energy (or wavelength) and thickness are presented. The obtained simulation results, based on this relation, are in good accord with the literature values and are consistent with some well-accepted studies. Furthermore, the results reported in this analysis are helpful for the determination and realization of the optical response of materials under conditions of varying photon energy and thickness.

show abstract

Germanium-on-Silicon for Integrated Silicon Photonics

Cited by 4 publications

References 93 publications

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

N-type doping of Ge by P spin on dopant and pulsed laser melting

Simulation of optical properties of semiconductor multilayers from extreme ultraviolet to far infrared

Contact Info

Product

Resources

About