Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

Abstract

Suppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures

Laser synthesis of germanium tin alloys on virtual germanium

“…1,2 Due to the extreme low solubility of Sn in Ge (<1%), 3 great efforts were directed to optimize the growth of such alloys with conventional techniques like chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) by tuning the deposition parameters for a non-equilibrium epitaxial growth. [4][5][6][7][8] In the past, also alternative techniques involving laser annealing 9-11 were proposed but not further developed.…”

“…7 Time resolved reflectivity (TRR) measurements using a HeNe (632.8 nm) probe laser beam, positioned at about 45 to the sample normal, was employed to monitor the melt duration 12 from the solid/liquid/solid phase transitions reflectivity changes during PLIE. The reflected beam was focused to a fast (<1 ns rise time) photodiode connected to a digital oscilloscope.…”

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

“…The growth of GeSn:B is of high interests for different kind of devices. 7,14 Growth conditions were kept again at 320 C and atmospheric pressure, keeping the same Ge 2 H 6 /SnCl 4 flow ratio (giving 7% Sn in GeSn alloy for undoped layers) and adding B 2 H 6 with different partial pressures during the growth. This time, 80 nm GeSn:B layers were grown on 1 lm slightly n-type doped (1 Â 10 17 cm À3 ) Ge/Si blanket 200 mm wafers.…”

Silicon germanium tin alloys formed by pulsed laser induced epitaxy

“…[13][14][15][16] Transmission electron microscopy (TEM) was employed for insights into the crystal quality. The "as grown" v-Ge, being grown as a single step virtual substrate, already possess a high amount of threading-dislocations (defect density > 1 Â 10 10 /cm 2 ) 18 (Fig. 4(a)).…”

“…18 The samples were irradiated in He atmosphere using pulses of a commercial 193 nm ArF excimer laser. Pulse energy density was kept at 500 mJ/cm 2 and the number of laser pulses varied from 1 to 100.…”