2020
DOI: 10.1109/jeds.2020.2999616
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Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure

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Cited by 3 publications
(2 citation statements)
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“…The polarization switching of a FeFET memory device can be regarded as representing time-voltage dependence [20]; therefore, the FeFET can be switched in a short time at a sufficiently large V G . The high program/erase speed of the fabricated Fe-FinFET can be attributed to the fact that the Fe-FinFET has a higher electric field [21] acting on HZO than does the planar FET. As depicted in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The polarization switching of a FeFET memory device can be regarded as representing time-voltage dependence [20]; therefore, the FeFET can be switched in a short time at a sufficiently large V G . The high program/erase speed of the fabricated Fe-FinFET can be attributed to the fact that the Fe-FinFET has a higher electric field [21] acting on HZO than does the planar FET. As depicted in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In the past decade, amorphous or crystalline germanium nanoparticles (Ge-NPs)-based nanostructures have been extensively studied on the one hand due to their interestingly fundamental properties and on another hand for potential applications like photonic applications, , optoelectronics, photovoltaics and near-IR detectors, lithium-ion batteries, , neuromorphic engineering, or memory devices. , This extensive attention is especially due to Ge-NP intrinsic properties compared to Si NPs as those of larger dielectric constant, smaller bulk band gap (Ge = 0.66 eV against Si = 1.1 eV), , larger Bohr exciton radius (Ge = 24.3 nm against Si = 4.5 nm), higher electron and hole mobility, and larger absorption coefficient (tuneable light emission and detection in a wider spectral range). Additionally, the Ge-NPs represent an ideal candidate for use as charge-storing nodes in memory devices. Most current Ge-NP-based memory devices use SiO 2 as tunnel and/or gate oxide, respectively. , The device’s downscaling is slowed down by SiO 2 limitations .…”
Section: Introductionmentioning
confidence: 99%