“…In the past decade, amorphous or crystalline germanium nanoparticles (Ge-NPs)-based nanostructures have been extensively studied on the one hand due to their interestingly fundamental properties − and on another hand for potential applications like photonic applications, , optoelectronics, photovoltaics and near-IR detectors, − lithium-ion batteries, , neuromorphic engineering, or memory devices. , This extensive attention is especially due to Ge-NP intrinsic properties compared to Si NPs as those of larger dielectric constant, smaller bulk band gap (Ge = 0.66 eV against Si = 1.1 eV), , larger Bohr exciton radius (Ge = 24.3 nm against Si = 4.5 nm), higher electron and hole mobility, and larger absorption coefficient (tuneable light emission and detection in a wider spectral range). Additionally, the Ge-NPs represent an ideal candidate for use as charge-storing nodes in memory devices. − Most current Ge-NP-based memory devices use SiO 2 as tunnel and/or gate oxide, respectively. , The device’s downscaling is slowed down by SiO 2 limitations .…”