GeSn channel nMOSFETs: Material potential and technological outlook

Gupta, Shanti S.; Vincent, Benjamin; Lin, Dennis; Gunji, Marika; Firrincieli, Andrea; Gencarelli, Federica; Magyari-Köpe, Blanka; Yang, Bin; Douhard, Bastien; Delmotte, Jeroen; Franquet, Alexis; Caymax, Matty; Dekoster, J; Nishi, Yoshio; Saraswat, Krishna C.

doi:10.1109/vlsit.2012.6242478

Cited by 31 publications

(28 citation statements)

References 6 publications

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“…Actually, the effective mobility reduction by this mechanism has already been observed in InGaAs nMOSFETs [15], [16]. The third possible mechanism, especially responsible for the mobility reduction in Ge nMOSFETs, is the carrier repopulation from subbands with a smaller effective mass to those with a larger effective mass (such as L to valley), as theoretically predicted in [17] and [18]. However, the main mechanism responsible for the high N s mobility degradation in Ge MOSFETs is not clear yet, in spite of the importance.…”

mentioning

confidence: 56%

“…A theoretical calculation has predicted that (100) Ge n-MOSFETs in high normal field have a possibility for electrons to transfer from the L valleys with the low effective mass to the valleys with the high effective mass, which can significantly degrade the electron mobility with an increase in N s [18]. However, this effect has not been experimentally examined yet.…”

Section: Electron Transfer To Subbands With Heavy Effective Massmentioning

confidence: 99%

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Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Zhang

Takenaka

et al. 2014

IEEE Trans. Electron Devices

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Mechanisms of the mobility degradation in high normal field (or N s ) in Ge p-and n-metal-oxide-semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO x /Ge MOS interfaces: 1) carrier trapping due to surface states; 2) surface roughness scattering; and 3) electron transfer into the valleys with the high effective mass, have been systematically investigated. It is confirmed that the existence of surface states inside the valence band and the conduction band of Ge results in over estimation of the mobile inversion carrier concentration and the rapid reduction of the effective mobility. It is also found that the Hall hole and electron mobility in high N s region agree well with the theoretical surfaceroughnesslimited mobility, indicating that the high N s mobility in Ge MOSFETs are still significantly limited by surface roughness scattering. On the other hand, any evidence of the carrier repopulation into the subband with low mobility has not been experimentally identified in both Ge p-and n-MOSFETs yet.Index Terms-Germanium, metal-oxide-semiconductor field-effect transistor (MOSFET), mobility degradation.

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mentioning

confidence: 56%

Section: Electron Transfer To Subbands With Heavy Effective Massmentioning

confidence: 99%

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Zhang

Takenaka

et al. 2014

IEEE Trans. Electron Devices

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“…[37][38][39][40] The reported Sn compositional dependence of band-gaps at C and L-point, denoted as E G,C and E G,L , respectively, are shown in Fig. 1(a).…”

Section: Extraction and Calculation Of Materials Parametersmentioning

confidence: 99%

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Yang

Low

Wang

et al. 2013

Journal of Applied Physics

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Articles you may be interested inRelaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain AIP Advances 5, 057145 (2015); 10.1063/1.4921572Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

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“…[11][12][13] Several works have been dedicated to the fabrication of MOSFETs SiGe and GeSn. [14][15][16][17][18] In these studies, the semiconducting alloy was grown by either gas phase epitaxy or molecular beam epitaxy, which increases the cost of production significantly.…”

Section: Introductionmentioning

confidence: 99%

Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

Hussain

Singh

Fahad

et al. 2014

Journal of Applied Physics

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We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well as experimentally by fabricating MOSFETs. Our study suggests that the alloy offers interesting possibilities in the realm of silicon band gap tuning. We have explored diffusion of tin (Sn) into the industry's most widely used substrate, silicon (100), as it is the most cost effective, scalable and CMOS compatible way of obtaining SiSn. Our theoretical model predicts a higher mobility for p-channel SiSn MOSFETs, due to a lower effective mass of the holes, which has been experimentally validated using the fabricated MOSFETs. We report an increase of 13.6% in the average field effect hole mobility for SiSn devices compared to silicon control devices. V C 2014 AIP Publishing LLC. [http://dx.

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GeSn channel nMOSFETs: Material potential and technological outlook

Cited by 31 publications

References 6 publications

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

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GeSn channel nMOSFETs: Material potential and technological outlook

Cited by 31 publications

References 6 publications

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO x /Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO x /Ge MOS Interfaces Fabricated by Plasma Postoxidation

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach

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Product

Resources

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Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO_x/Ge MOS Interfaces Fabricated by Plasma Postoxidation