2020
DOI: 10.1021/acsami.0c15887
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GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Abstract: The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challenge, mainly because of the low miscibility of Ge and Sn. The use of embedded GeSn nanocrystals (NCs) by magnetron sputtering is a cost-effective and efficient method to relax the growth conditions. We report on the use of GeSn/SiO2 multilayer deposition as a way to … Show more

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Cited by 25 publications
(27 citation statements)
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“…As can be seen in Figure 4, the photocurrent spectrum is also shifted to longer wavelengths by increasing the measurement temperature at 300 K, but the efficiency is strongly reduced due to the increase of the photocarrier recombination probability. We showed in previous reports on group IV-based NCs that the spectral photocurrent efficiency is much increased at low temperatures (100-200 K) than at room temperature, and it has a weak dependence on temperature in contrast to the 200-300 K interval for which it strongly decreases with the increase of temperature (e.g., in [38]). The lowering of the efficiency at high temperature reduces the photocurrent below the sensitivity of the used measurement setup for wavelengths longer than 1800 nm.…”
Section: Spectral Photosensitivitymentioning
confidence: 78%
“…As can be seen in Figure 4, the photocurrent spectrum is also shifted to longer wavelengths by increasing the measurement temperature at 300 K, but the efficiency is strongly reduced due to the increase of the photocarrier recombination probability. We showed in previous reports on group IV-based NCs that the spectral photocurrent efficiency is much increased at low temperatures (100-200 K) than at room temperature, and it has a weak dependence on temperature in contrast to the 200-300 K interval for which it strongly decreases with the increase of temperature (e.g., in [38]). The lowering of the efficiency at high temperature reduces the photocurrent below the sensitivity of the used measurement setup for wavelengths longer than 1800 nm.…”
Section: Spectral Photosensitivitymentioning
confidence: 78%
“…It features a main peak, ω Ge–Ge , at 295 cm –1 , corresponding to the Ge–Ge vibration mode in the Ge–Sn alloy, and a lower-intensity peak centered at ω Ge–Sn ∼ 258 cm –1 , corresponding to Ge–Sn vibration mode. The main peak has a tail extending on the low-energy side due to Sn disorder-induced Ge–Ge phonon scattering. , For consistency, an exponentially modified Gaussian function was used for fitting of the peak position …”
Section: Experimental Methodsmentioning
confidence: 99%
“…The main peak has a tail extending on the low-energy side due to Sn disorder-induced Ge−Ge phonon scattering. 22,23 For consistency, an exponentially modified Gaussian function was used for fitting of the peak position. 24 ■ RESULTS AND DISCUSSION Raman Thermometry.…”
Section: Acs Applied Energy Materialsmentioning
confidence: 99%
“…This ensures a strong quantum confinement effect in SiGeSn QDs that in turn allows a high charge storage efficiency. On the other hand, alloying with Sn leads to highly short-wave infrared (SWIR) photosensitivity [26,27] that can be further exploited for photonic flash memories enabling fast access speed and low energy consumption by optical control of threshold voltage shift [1].…”
Section: Introductionmentioning
confidence: 99%
“…Our approach for QDs-based NVM consists of preparing structures with trilayer configuration with SiGeSn QDs-based floating gate and HfO 2 gate and tunnel oxides fabricated on Si wafer in which the charge is injected from Si substrate. Besides the above-mentioned advantages, HfO 2 also plays the role of barrier for Ge and Sn diffusion, and tunnel and gate oxide layers play the role of spacers allowing to control QDs size [27,28]. The use of nanocrystallized HfO 2 as a matrix for SiGeSn QDs enables a good separation of QDs to each other [14].…”
Section: Introductionmentioning
confidence: 99%