Gettering and Passivation of Metals in Silicon and Germanium

Claeys, Cor; Simoen, Eddy

doi:10.1007/978-3-319-93925-4_8

Cited by 2 publications

(1 citation statement)

References 136 publications

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“…This indicates that the grain structure formed by ELC is not affected by CD, which indicates that Ge thin films are not fully amorphized by phosphorus ion implantation at a dose of 5 × 10 13 cm −2 or lower. 30,31) Overall, high-quality n-type Ge thin films with large grains could be realized by ELC in the SLG regime and CD at a dose of 1 × 10 13 cm −2 or higher.…”

Section: Resultsmentioning

confidence: 96%

High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films

Liao

Huang

et al. 2017

Jpn. J. Appl. Phys.

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High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 µm were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 × 1013 cm−2 or higher. Consequently, a superior field-effect mobility of 271 cm2 V−1 s−1 and a high on/off current ratio of 2.7 × 103 have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 µm fabricated by ELC at 300 mJ/cm2 and CD at a dose of 1 × 1013 cm−2. The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated.

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Section: Resultsmentioning

confidence: 96%