Gettering Efficiency of Si(110)/Si(100) Directly Bonded Hybrid Crystal Orientation Substrates

Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

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“…The calculation result for Fe well supports the reported experimental result (Fig. 7) of SIMS measurements for Fe profiles [6].…”

Section: Resultssupporting

confidence: 90%

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Kariyazaki

Aoki

Izunome³

et al. 2009

SSP

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“…Iron concentrations 3 orders of magnitude higher than in undisturbed areas can be found in the vicinity of the defects. 14 In the case of mc silicon the density of possible precipitation sites is the product of the dislocation density and the linear density of precipitation sites along a dislocation. The linear density of precipitation sites was chosen to be l p ¼ 3.3 Â 10 5 cm À1 .…”

Section: Model For Iron In MC Siliconmentioning

confidence: 99%

Understanding the distribution of iron in multicrystalline silicon after emitter formation: Theoretical model and experiments

Schön

Habenicht

Schubert

et al. 2011

Journal of Applied Physics

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We studied the behavior of iron in multicrystalline silicon during phosphorus diffusion by spatially resolved measurements and physical modeling. We present improvements to the previously used models for internal gettering in multicrystalline silicon and phosphorus diffusion gettering. 2-dimensional simulations are used for optimization of the phosphorus diffusion processes for intentionally contaminated wafers regarding the iron distribution, without changing the emitter characteristics. Simulations and experimental results show a reduced interstitial iron concentration after an additional low temperature step at the end of the phosphorus diffusion. The concentration of iron precipitates was reduced by a short annealing at 900 degrees C before the phosphorus diffusion, leading to a carrier lifetime three times higher than compared to the standard process

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“…In the previous work, we have experimentally confirmed the gettering of the contaminated metals at the DSB interface [11]. The quantitative evaluation of the gettering efficiency at the screw defects will be the future work.…”

Section: Chemical Bondingmentioning

confidence: 58%

First‐principles calculation on screw defects at Si(110)/(100) interface

Kariyazaki

Aoki

Izunome³

et al. 2011

Phys. Status Solidi (c)

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Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation are promising for high‐performance bulk complementary metal‐oxide semiconductor technology. We have studied the interfacial structure of the Si (110)/(100) paralleling each 〈110〉 direction, including screw defects, by first‐principles calculation. The screw defects were characterized by analysing the atomic configuration and the chemical bonding. Furthermore, the periodicity of the screw defects is discussed in comparison the experimental results (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gettering Efficiency of Si(110)/Si(100) Directly Bonded Hybrid Crystal Orientation Substrates

Cited by 4 publications

References 15 publications

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Understanding the distribution of iron in multicrystalline silicon after emitter formation: Theoretical model and experiments

First‐principles calculation on screw defects at Si(110)/(100) interface

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