2005
DOI: 10.1016/j.solmat.2004.09.017
|View full text |Cite
|
Sign up to set email alerts
|

Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
20
0
1

Year Published

2006
2006
2024
2024

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 42 publications
(21 citation statements)
references
References 8 publications
0
20
0
1
Order By: Relevance
“…This value fits well with the reported binding energy of 135.3 eV for P 4 O 10 . 16 It should be mentioned here that at this depth (4-11 nm), the O(P 3 ) peak of the O1s was observed which was assigned to P 4 17 In the present work, the energy separation between the peak P-2p 3=2 and Si-2p 3=2 is used to monitor the relative positions of the two peaks with depth. An increase of the P-2p 3=2 -Si-2p 3=2 energy separation implies either a reduced screening of the P-2p 3=2 and/or an increased screening of the Si-2p 3=2 .…”
Section: Resultsmentioning
confidence: 68%
See 1 more Smart Citation
“…This value fits well with the reported binding energy of 135.3 eV for P 4 O 10 . 16 It should be mentioned here that at this depth (4-11 nm), the O(P 3 ) peak of the O1s was observed which was assigned to P 4 17 In the present work, the energy separation between the peak P-2p 3=2 and Si-2p 3=2 is used to monitor the relative positions of the two peaks with depth. An increase of the P-2p 3=2 -Si-2p 3=2 energy separation implies either a reduced screening of the P-2p 3=2 and/or an increased screening of the Si-2p 3=2 .…”
Section: Resultsmentioning
confidence: 68%
“…This is widely used in solar cell processing. 3,4 These impurities can enhance recombination processes and reduce lifetime of charge carriers and solar cell efficiency. 5 Reducing P 2 O 5 to elemental P in the surface region of the Si wafer can cause the concentration briefly to exceed that of a saturated solid solution.…”
mentioning
confidence: 99%
“…Although the problem of precipitates in principle has been eliminated, the purity effectiveness depends on the establishment of gettering sites for absorbing impurities, the diffusion coefficients of the impurities in bulk Si, and the segregation coefficient of the impurities at the gettering sites [27][28][29][30].…”
Section: Resistivity Measurementmentioning
confidence: 99%
“…Possibility of the conversion of high-energy ultraviolet and blue part of the solar spectrum into long-wavelength radiations due to photoluminescence in nanocrystalline porous silicon (Svrcek et al 2004) 5. Surface passivation and gettering role of porous silicon (Weiying et al 2011;Ben Rabna et al 2013;Solanki et al 2004;Khedher et al 2005) 6. Simplicity and lower cost of fabrication technology of nanoporous silicon due to electrochemical modification of silicon There are two types of technology of formation of porous silicon layer on silicon solar cells: (1) the thin porous silicon is formed in the final step on the surface of ready Si solar cell with metal contacts and (2) the relatively thick porous silicon layer is formed prior to emitter diffusion and metal contact deposition.…”
Section: Porous Silicon In Solar Cellsmentioning
confidence: 99%