The impact of thermal treatment on gettering efficiency in silicon solar cell

Zarroug, Ahmed; Derbali, Lotfi; Ezzaouia, Hatem

doi:10.1016/j.mssp.2014.10.042

Cited by 12 publications

(4 citation statements)

References 30 publications

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“…[28] showed that improve carrier lifetime also improved the solar cell efficiency. This was reported in many previous works since improving the electrical properties of crystalline silicon is of great importance for photovoltaic applications [29,30].…”

Section: Resultsmentioning

confidence: 53%

Yttrium oxide passivation of porous silicon nanostructures for improved photoluminescence and optoelectronic properties

Derbali

Whibi

Zarroug

et al. 2018

J Mater Sci: Mater Electron

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This paper reports on the effect of yttrium oxide as a novel treatment to improve the photoluminescence intensity and stability of porous silicon (PS). Yttrium oxide (Y2O3) was incorporated into the PS layers by impregnation method using a saturated aqueous solution. The penetration of Yttrium into the PS microstructure was examined using the Energy Dispersive X-ray spectrometry (EDS) and the Backscattered Electron Detector (BED-C) for composition imaging and analysis. The morphology of the front surface was studied using a Field Emission Scanning Electron Microscope (FESEM). The deposited yttrium oxide onto the PS layers was thermally activated to passivate efficiently the silicon dangling bonds, and prevent the porous silicon from huge oxidation. The photoluminescence (PL) peak intensity of impregnated PS was increased noticeably compared to the as-prepared untreated PS. Unlike the as-prepared PS photoluminescence dependence with aging, the yttrium-passivated PS layers PL peak shows no shifts during aging allowing a high stability. Furthermore, we obtained a significant improvement of the effective minority eff) after a short anneal at 600 °C, while increasing the temperature reduces noticeably the passivation properties. The improved surface passivation experienced after the thermal annealing can be ascribed to yttrium diffusion into the PS layer, with a resulting redistribution of yttrium oxide and subsequent passivation of silicon dangling bonds in the sub-interface region, this was confirmed by EDS analysis. The internal quantum efficiency (IQE) measurements were performed to study the optoelectronic properties of the processed monocrystalline silicon substrates.

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Section: Resultsmentioning

confidence: 53%

Yttrium oxide passivation of porous silicon nanostructures for improved photoluminescence and optoelectronic properties

Derbali

Whibi

Zarroug

et al. 2018

J Mater Sci: Mater Electron

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“…The absolute gain efficiency of gettered solar cells compared to ungettered solar cells, depending on the oxidation temperature, was 1.36–1.96%. At the same time, almost all electronic parameters are improved, which is also observed in the case of traditional gettering or co‐gettering processes, including the phosphorus diffusion [ 3,6,38 ] and porous Si layer [ 10,16,20,22 ] methods. With an increase in the oxidation temperature, this tendency increases.…”

Section: Resultsmentioning

confidence: 91%

“…Most often, gettering with a layer of porous Si is combined with other gettering methods, namely, Al, [18] V 2 O 5 , [19] or ZnO [20] films, phosphorus diffusion, [15,21] and mechanical grooving. [10,22] It is reported that co-gettering has a beneficial effect on the transport properties of Si substrates (effective minority carrier lifetime, diffusion length, mobility of majority charge carriers). In some works, the gettering process by porous Si has been successfully tested in the production process of epitaxial thin-film [17] and bulk [14][15][16]22] Si solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…[10,22] It is reported that co-gettering has a beneficial effect on the transport properties of Si substrates (effective minority carrier lifetime, diffusion length, mobility of majority charge carriers). In some works, the gettering process by porous Si has been successfully tested in the production process of epitaxial thin-film [17] and bulk [14][15][16]22] Si solar cells. Thus, Nouri et al showed that this gettering provided a solar cell efficiency absolute gain of 1.5%.…”

Section: Introductionmentioning

confidence: 99%

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External Gettering of Metallic Impurities by Black Silicon Layer

Ayvazyan

Hakhoyan

Ayvazyan

et al. 2023

Physica Status Solidi (a)

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Black silicon (b‐Si) has many attractive properties and is currently being adopted in various fields of semiconductor technology. It is shown here that b‐Si during thermal activation may serve as an external gettering layer to remove metallic impurities and associated defects from bulk Si. The gettering efficiency by b‐Si is estimated according to the results of studying the resistivity, defect density, interstitial iron concentration, and effective minority carrier lifetime on gettered test and ungettered reference Si samples. It is shown that in the thermal oxidation process, the b‐Si layer serves as an effective drain for excess iron atoms and other fast‐diffusing impurities, thereby significantly reducing the density of oxidation‐induced stacking faults in Si. In addition, the resistivity of the substrates decreases, and the bulk carrier lifetime increases significantly. Finally, gettering by b‐Si is introduced into the solar cells fabrication process and its effect on solar cell current–voltage characteristics is investigated. It has been shown that all electronic parameters of the solar cells are improved. The conversion efficiency of ungettered solar cells is 16.8%, and for gettered solar cells, depending on the oxidation temperature, it increases by 1.36–1.96%.

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Application of Black Silicon

Ayvazyan

2024

Synthesis Lectures on Materials and Optics

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The impact of thermal treatment on gettering efficiency in silicon solar cell

Cited by 12 publications

References 30 publications

Yttrium oxide passivation of porous silicon nanostructures for improved photoluminescence and optoelectronic properties

Yttrium oxide passivation of porous silicon nanostructures for improved photoluminescence and optoelectronic properties

External Gettering of Metallic Impurities by Black Silicon Layer

Application of Black Silicon

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