Gettering of mobile oxygen and defect stability within back-surface damage regions in Si

Magee, T. J.; Leung, C.; Kawayoshi, H.; Furman, B. K.; Evans, C. A.

doi:10.1063/1.92218

Cited by 22 publications

(6 citation statements)

References 9 publications

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“…This is consistent with the fact that there is excessive compressive stress in the lattice of the As-wafer [12]. The gettering of oxygen to damaged region were reported before in lightly doped p-type wafers [15,16]. The gettering of oxygen to damaged region were reported before in lightly doped p-type wafers [15,16].…”

Section: Resultssupporting

confidence: 88%

Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

et al. 2005

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The precipitation of interstitial oxygen (Oi) in heavily arsenic doped Czochralski (CZ) silicon wafers (As-wafer) has been studied for both polysilicon and damaged back surfaces. After annealed at 1200°C for 45 minutes and 950°C for 15hrs sequentially, the As-wafers with polysilicon show no Oi precipitation in the bulk while polyhedral Oi precipitates are observed at the interface between polysilicon and the silicon substrate. They exhibit a habit plane of {100}. The lack of the Oi precipitation in the bulk may reduce the total gettering efficiency of the polysilicon layer on the As-wafer. The same annealing led to rod-like SiOx precipitates in the wafers with damaged back surface. These precipitates extended about 1um into the bulk and had a habit plane of {111}. This morphology has high interfacial energy and is only possible when strain relief is dominant. The Oi outdiffusion has been observed to be same for both backside surface conditions and is only determined by annealing process.

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Section: Resultssupporting

confidence: 88%

Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

et al. 2005

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“…(394) introduced from the surface, segregation studies of C, P, and Fe in laser-annealed Si (406), the study of the solid phase epitaxial growth (SPEG) of ~-Si (407), and measurements of the gettering of O upon annealing into damage regions produced by mechanical abrasion (408). Most important are, however, the measurements of implantation profiles from which many different kinds of information can be obtained [for a more detailed discussion see Ref.…”

Section: Dopant and Impurity Distributions In Semiconductorsmentioning

confidence: 99%

“…SIMS measurements in silicon.--In the past Si has been the most widely investigated semiconductor. While there are almost no SIMS depth profiling measurements in Ge (399), SIMS measurements in Si include studies of the distribution of the most common impurities C and O (400,401), studies of the diffusion of H, C, N, and O in a-Si (150,390,402), diffusion measurements of Ga (403), P (404), or Si (405) introduced from the surface, segregation studies of C, P, and Fe in laser-annealed Si (406), the study of the solid phase epitaxial growth (SPEG) of ~-Si (407), and measurements of the gettering of O upon annealing into damage regions produced by mechanical abrasion (408). Most important are, however, the measurements of implantation profiles from which many different kinds of information can be obtained [for a more detailed discussion see Ref.…”

Section: Dopant and Impurity Distributions In Semiconductorsmentioning

confidence: 99%

Sputter Depth Profiling of Microelectronic Structures

Zinner

1983

J. Electrochem. Soc.

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Reviewed are the principles and applications of sputter depth profiling for the analysis of semiconductor and microelectronic materials. Various techniques are based on sputter removal whereby either the sputtered species (in SIMS, SCANIIR) or the remaining surface (AES, XPS, ISS) are investigated. In spite of its increasing importance, there are many problems associated with sputter etching. After a general survey of the principles, a detailed discussion is devoted to the many effects which can distort sputter depth profiles and limit depth resolution. These effects can be caused by instrumental factors (nonuniformity of erosion, beam impurities, vacuum contaminants) and the sample composition or can be due to the analysis method used (information depth, matrix effects, detection limit, sample consumption). Most important are the effects caused by the sputtering ion beam itself. Among these are notably preferential sputtering, atomic mixing, surface roughness as a result of the sputter process, sample charging, surface transport, and chemical reduction. The review of applications concentrates on the measurement of the distribution of dopants and impurities in semiconductors, on the study of insulating films (in particular the Si/SiO~ interface and the oxidation of GaAs), and on the metallization problem in Si and GaAs technology.The ever-increasing miniaturization of electronic devices in VLSIC technology (1) places new demands on analytical techniques for their characterization (2, 3). Of special interest is the measurement of elemental distributions, in particular the measurement of dopant distributions in the semiconductor substrate (4, 5) and the analysis of diffusive and reactive processes between metal, semiconductor, and dielectric films (6, 7) which are the basic elements of microelectronic structures. The analytical requirements for measurement techniques include good spatial resolution as well as elemental sensitivity and specificity. Although there are interesting questions to be asked with respect to lateral dimensions, because of the planar structure of most microelectronic devices, methods for the measurement of elemental concentrations as a function of depth are of special importance. An example for the requirements for the depth resolution of such methods is given in Fig. 1 which shows calculated depth distributions of dopants in base and camel collector of a monolithic hot electron transistor (MHET) with an extremely shallow barrier raising implant.An overview of methods for the measurement of depth profiles is given in Table I. The so-called nondestructive techniques are so named n~t because they necessarily leave the sample undamaged, but because the sample surface does not have to be removed in order to obtain information about the inside. The sample interior is rather probed with penetrating ion or electron beams whereby the depth information is obtained via the energy loss experienced by the particles while traversing the sample. Rutherford backscattering spectroscopy (RBS) is based on the ...

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“…Applications of EG to Czochralski (CZ) Si can cause an interaction between EG and IG to occur. It has been reported recently that EG causes an enhancement of oxygen precipitation in the wafer bulk (4,5), as well as a gettering of oxygen in the damaged regions (6,7). Oxygen precipitation occurs with the increase in volume.…”

mentioning

confidence: 99%

Effects of Various Pre‐Intrinsic and Phosphorus Diffusion Gettering Treatments Upon Quality of Czochralski Silicon Wafer Surface during a Simulated 4 Megabit Dynamic Random Access Memory Process

Partanen

Tuomi

Yang

et al. 1992

J. Electrochem. Soc.

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Effects of various preintrinsic and phosphorus diffusion gettering treatments upon quality of near-surface region in Czochralski silicon wafers are studied during a simulated 4 Mb dynamic random access memory process. Denuded zone depth and bulk microdefect density are determined by synchrotron radiation section topography. Minority carrier lifetime and junction characteristics from test device structures were measured to determine overall gettering efficiency. A two-step thermal anneal cycle before actual device processing resulted in formation of precipitates, dislocations, stacking faults, and a well-defined denuded zone in samples with medium oxygen content only when a low-temperature cycle at 775~ was followed by a high-temperature one at 1150~ The longest minority carrier lifetimes are observed in samples where very few or no defects are visible in the bulk of the wafer in the section topographs. Phosphorus gettering, however, was found to be effective for improving both minority carrier lifetime and junction properties.Gettering is a means of reducing the concentration of metallic impurities in the active areas of a wafer by localizing them in predetermined regions away from those occupied by devices. This is realized by introducing one or more types crystalline defects to control the unwanted defects. The gettering techniques are classified into two large groups: "extrinsic" and "intrinsic." In extrinsic gettering (EG) the controlling defects are introduced externally, usually at the back side of the wafer. EG is achieved by one or more of the following techniques: metal film deposition, solute diffusion such as phosphorus gettering, mechanical damage, ion implantation, laser damage, Si3N4 film deposition, polysilicon deposition, low-current corona discharge, and Ge-doped Si-epitaxy. In intrinsic gettering (IG) the controlling defects are induced in the bulk of the wafer during the thermal process (1). The essence of IG is to control the thermally induced microdefects; that is, microdefects in silicon crystals can act as gettering sites for undesirable impurities when they are formed in the bulk of the wafer (2, 3). Applications of EG to Czochralski (CZ) Si can cause an interaction between EG and IG to occur. It has been reported recently that EG causes an enhancement of oxygen precipitation in the wafer bulk (4, 5), as well as a gettering of oxygen in the damaged regions (6, 7). Oxygen precipitation occurs with the increase in volume. The very large volume change associated with oxygen precipitate (~126%) creates a strain field. If the strain field exceeds the elastic limit of silicon, then dislocations, dislocation loops, and stacking faults are generated to relieve the strain. The degree of the interactions between EG and IG can be determined by the amount of crystal defects formed by various gettering treatments and subsequent thermal cycles.In this investigation we examined three different preinitial oxidation heat-treatments (IG) and phosphorus diffusion gettering (EG) of CZ silicon. We studied the ...

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Gettering of mobile oxygen and defect stability within back-surface damage regions in Si

Cited by 22 publications

References 9 publications

Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers

Sputter Depth Profiling of Microelectronic Structures

Effects of Various Pre‐Intrinsic and Phosphorus Diffusion Gettering Treatments Upon Quality of Czochralski Silicon Wafer Surface during a Simulated 4 Megabit Dynamic Random Access Memory Process

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