Gettering of Pd to implantation-induced nanocavities in Si

Brett, D. A.; Azevedo, G. de M.; Llewellyn, David J.; Ridgway, Mark C

doi:10.1063/1.1597424

Cited by 11 publications

(8 citation statements)

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“…88,132 Interestingly, it has been experimentally confirmed that metallic impurity atoms sre efficiently trapped near nanocavities in a silicon host matrix. 117,[133][134][135][136][137][138] Moreover, artificial cells with nanocavities can sequester poisonous heavy elements such as heavy metal atoms in the human body. 96 The void volume and inner skin associated with such nanocavities are the preferred trapping centers for impurities.…”

Section: Observationsmentioning

confidence: 99%

Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects

2009

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Section: Observationsmentioning

confidence: 99%

Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects

2009

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“…7,8 For technical applications, clean nanocavities in Si are used as gettering centers for several heavy metals. 9 Increasing the H and He ion dose implantation, blistering, and exfoliation can occur: these phenomena have found practical applications in the wafer splitting technology. [10][11][12] The phenomena that cause the bubbles and cavities formation are several and they involve the implanted species as well as vacancies, interstitials, impurities, and dopants.…”

Section: Introductionmentioning

confidence: 99%

Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

et al. 2006

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Si p-type ͑100͒ samples were coimplanted at room temperature with He + ions at 30 keV with a dose of 1 ϫ 10 16 ions/ cm 2 and successively with H + ions at 24 keV with a dose of 1 ϫ 10 16 ions/ cm 2 . A series of samples was thermally treated for 2 h from 100 to 900°C at 100°C steps to study the evolution of pointlike and extended defects by two complementary techniques: positron Doppler broadening spectroscopy and transmission electron microscopy. Depth profiling the samples with a positron beam led to the identification of five different traps and the evolution of their profile distributions with thermal treatments. The positron traps were identified as decorated vacancy clusters of different sizes. Their decoration by implanted ions and in some case by oxygen was probed by coincidence Doppler broadening spectroscopy. Up to 300°C annealing temperature positrons probe three distributions of different decorated defects covering regions of the sample down to 400-450 nm. Starting from 300°C annealing temperature no defects were revealed by positrons in the region next to the peak of the implanted ions distributions positioned around 280 nm, where extended defects are expected; this indicates complete filling of the defects by H and He. From 300 to 600°C decorated vacancy clusters of different sizes appear progressively in the region below 280 nm, with a distribution moving deeper into the sample. Comparison with previous measurements on He-implanted samples points out the chemical action of H. Hydrogen atoms interact with the previous damage by He, producing more stabilized vacancylike defects distributed through the damage region of the sample. Electron microscopy shows the transformation of the extended defects from platelets to blisters and cavities.

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“…They are also produced as a consequence of nanocavity formation; however, the contribution of these dislocations to the gettering observed in nanocavity structures has not been investigated previously. Recently, 6 we observed that Pd-containing precipitates were concentrated along dislocations rather than being randomly distributed amongst nanocavities. To determine whether this effect was unique to Pd or common to other metals, Au and Cu were chosen for comparison.…”

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confidence: 96%

“…1 Consequently, the gettering of these unintentionally introduced impurities has been the topic of extensive research. Nanocavity structures, produced in Si by the implantation of H or He and subsequent annealing, are capable of gettering a wide range of metals, including Fe, 2 Co, 3 Ni, 4 Cu, 5 Pd, 6 Ag, 7 Pt, 8 and Au. 9 Precipitates of these metals and/or their silicides have been frequently observed in nanocavity structures, and it has been assumed that these precipitates were the result of excess metal filling in the nanocavities.…”

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confidence: 99%

“…The samples were then annealed in Ar for 1 h either at 950°C ͑Pd͒, 850°C ͑Au͒, or 780°C ͑Cu͒. These temperatures were chosen from those published in the literature to maximize the amount of metal trapped in the nanocavity structures, 6,14 Secondary ion mass spectrometry ͑SIMS͒ with either 12 keV O 2 + or 10 keV Cs − ions was used to determine the depth profile of the implanted metals. Transmission electron microscopy ͑TEM͒ was also performed at 300 kV in both cross section and plan view to examine the preferred precipitation location of the metals.…”

mentioning

confidence: 99%

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Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si

Brett

Llewellyn

Ridgway

2006

Applied Physics Letters

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The gettering of metallic impurities by nanocavities formed in Si is a topic of both scientific importance and technological significance. Metallic precipitates observed in the regions where nanocavities were formed have been considered the result of the metal filling the nanocavities, either as elemental metal or a silicide phase. However, our transmission electron microscopy observations demonstrate that many of these precipitates are concentrated along dislocations, rather than randomly distributed as expected for precipitates formed by the filling of nanocavities. Consequently, the gettering contribution of dislocations in the lattice caused by nanocavity formation must be considered. For Pd, dislocations are the preferred sites for the precipitation of the metal silicide. We compare results of gettering by nanocavities and dislocations for Pd, Au, and Cu to determine which structure is the dominant influence for the formation of precipitates of these metals and/or their silicides.

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Gettering of Pd to implantation-induced nanocavities in Si

Abstract: Articles you may be interested inEffects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon

Cited by 11 publications

References 14 publications

Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects

Surface Energy of Nanostructural Materials with Negative Curvature and Related Size Effects

Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

Trapping of Pd, Au, and Cu by implantation-induced nanocavities and dislocations in Si

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