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A Pd-vacancy ͑Pd-V − ͒ complex in Si has been identified with the perturbed angular correlation technique using the radioactive 100 Pd probe produced by recoil implantation. The fraction of Pd probes in the complex has been determined as a function of dopant type ͑B, P, As, and Sb͒, dopant concentration ͑10 15 -6 ϫ 10 19 cm −3 ͒ and annealing temperature ͑21-500°C͒. The Pd-V − complex, with a unique interaction frequency of 13.1͑2͒ MHz, was observed only in n + -Si with a maximum relative fraction of ϳ52% achieved between 200-300°C while a broad distribution of interaction frequencies was apparent in n-, p-, and p + -Si. Annealing beyond 300°C yielded a reduction in the Pd-V − fraction with a dissociation energy of 2.5͑7͒ eV. Density functional theory calculations of the electric field gradient for the given defect configuration were consistent with a measured value of 3.58ϫ 10 21 V/m 2 .

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