Giant Enhancement of Radiative Recombination in Perovskite Light-Emitting Diodes with Plasmonic Core-Shell Nanoparticles

Masharin, Mikhail A.; Berestennikov, Alexander S.; Barettin, Daniele; Voroshilov, Pavel M.; Ladutenko, Konstantin; Carlo, Aldo Di; Makarov, Sergey

doi:10.3390/nano11010045

Cited by 13 publications

(7 citation statements)

References 37 publications

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“…Therefore, oscillator strengths are given by [ 43 ]

where

is the direction unit vector of the electric field of the linearly or elliptically polarized incident light, V is the volume, e is the electron charge,

is the free electron mass, and

is the vacuum permittivity. All models are implemented and solved by using the TiberCAD simulator [ 44 , 45 , 46 ].…”

Section: Modelsmentioning

confidence: 99%

Electromechanically Coupled III-N Quantum Dots

et al. 2023

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We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer. When the thickness of a GaN spacer exceeds 1 nm, QDs from different layers under the same growth conditions emit independently and in the same wavelength range. When extremely thin (less than 1 nm), a GaN spacer is formed solely by applying short GI, and a double wavelength emission in the blue and green spectral ranges evidences the electromechanical coupling. With k→·p→ calculations including electromechanical fields, we model the optoelectronic properties of a structure with three InGaN lens-shaped QDs embedded in a GaN matrix, with three different configurations of In content. The profiles of the band structures are strongly dependent on the In content arrangement, and the quantum-confined Stark effect is significantly reduced in a structure with an increasing gradient of In content from the top to the bottom QD. This configuration exhibits carrier tunneling through the QDs, an increase of wave functions overlap, and evidence emerges of three distinct peaks in the spectral range.

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“…Therefore, oscillator strengths are given by [ 43 ]

where

is the direction unit vector of the electric field of the linearly or elliptically polarized incident light, V is the volume, e is the electron charge,

is the free electron mass, and

is the vacuum permittivity. All models are implemented and solved by using the TiberCAD simulator [ 44 , 45 , 46 ].…”

Section: Modelsmentioning

confidence: 99%

Electromechanically Coupled III-N Quantum Dots

et al. 2023

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“…Therefore, we refer one to the existing literature for a more detailed discussion [60][61][62][63]. All models were implemented and solved by using the TiberCAD simulator [64,65].…”

Section: Modelsmentioning

confidence: 99%

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

et al. 2023

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A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have not yet been examined in sufficient detail. Here, we present numerical simulations of a quantum-dot structure restored from an experimental high-resolution transmission electron microscopy image. A single InGaN island with the size of ten nanometers and nonuniform indium content distribution is analyzed. A number of two- and three-dimensional models of the quantum dot are derived from the experimental image by a special numerical algorithm, which enables electromechanical, continuum k→·p→, and empirical tight-binding calculations, including emission spectra prediction. Effectiveness of continuous and atomistic approaches are compared, and the impact of InGaN composition fluctuations on the ground-state electron and hole wave functions and quantum dot emission spectrum is analyzed in detail. Finally, comparison of the predicted spectrum with the experimental one is performed to assess the applicability of various simulation approaches.

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“…where ê is the unit vector of the electric field direction, V is the volume of the structure, e is the electron charge, m 0 is the free electron mass, and 0 is the vacuum permittivity. All models were implemented and solved by using the TiberCAD simulator [62,63].…”

Section: Structure and Modelsmentioning

confidence: 99%

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

et al. 2023

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We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

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Giant Enhancement of Radiative Recombination in Perovskite Light-Emitting Diodes with Plasmonic Core-Shell Nanoparticles

Cited by 13 publications

References 37 publications

Electromechanically Coupled III-N Quantum Dots

Electromechanically Coupled III-N Quantum Dots

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

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