2020
DOI: 10.23939/mmc2020.02.322
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Giant magnetoresistance effect in InSe<β-CD<FeSO4>> clathrate

Abstract: The InSe β-CD FeSO 4 clathrate with hierarchical architecture reveals a giant magnetoresistive effect and extraordinary (oscillating) behavior of the current-voltage characteristics in the magnetic field in the direction perpendicular to nanolayers. A new technological approach for the synthesis of multilayered nanostructure is proposed. It allows attaining a fourfold degree of expansion of the initial InSe semiconductor matrix in which the cavitate of β-cyclodextrin (β-CD) and iron sulfate served as a guest c… Show more

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Cited by 4 publications
(1 citation statement)
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“…Although constructed N-barrier model neglects many aspects of energy storage in heterostructures and its predictions may not be easily verified in experiments due to complexity of real hierarchical structures, it allows to make analytical progress and further generalization which accounts for more complex phenomena. Indeed, in order to investigate the current-voltage characteristics in the constant magnetic field in the direction perpendicular to stack of nanosheets the average current density in each domain was represented in [20] in terms of Green's functions. The influence of the magnetic field causes both a reduction of the conductivity associated with delocalized charge carriers and a growth of the hopping conductivity, as well as the quantization of energy levels of charge carriers, in particular in impurity sub-bands, which can result in the oscillatory behavior of the real component of the impedance in the low-frequency interval.…”
Section: Resultsmentioning
confidence: 99%
“…Although constructed N-barrier model neglects many aspects of energy storage in heterostructures and its predictions may not be easily verified in experiments due to complexity of real hierarchical structures, it allows to make analytical progress and further generalization which accounts for more complex phenomena. Indeed, in order to investigate the current-voltage characteristics in the constant magnetic field in the direction perpendicular to stack of nanosheets the average current density in each domain was represented in [20] in terms of Green's functions. The influence of the magnetic field causes both a reduction of the conductivity associated with delocalized charge carriers and a growth of the hopping conductivity, as well as the quantization of energy levels of charge carriers, in particular in impurity sub-bands, which can result in the oscillatory behavior of the real component of the impedance in the low-frequency interval.…”
Section: Resultsmentioning
confidence: 99%