In this work, we present findings on the syntheses and study of properties of InSe nanohybrid. The introduction of guest component in GaSe matrix leads to an increase in inhomogeneities, which is clearly confirmed by the strengthening of the low-frequency horizontal branch of Nyquist diagrams. A constant magnetic field counteracts this effect and changes the behavior of the impedance hodograph at low frequencies to the opposite. Illumination leads to a colossal increase in quantum capacitance, which is clearly demonstrated in the Nyquist diagram. For the synthesized InSe nanohybrid the interesting behavior of the current-voltage characteristic is reported. As a result of studies of the synthesized InSe nanohybrid the effect of "negative capacity" is observed, the magnitude of which can be controlled by the electric field. Based on the constructed impedance model and proposed N-barrier model, the physical mechanisms of the investigated processes are suggested.