Giant photoresistivity and optically controlled switching in self-assembled nanowires

Kouklin, N.; Menon, Latika; Wong, Alec; Thompson, Daniel W.; Woollam, John A.; Williams, P. F.; Bandyopadhyay, Supriyo

doi:10.1063/1.1427156

Cited by 132 publications

(78 citation statements)

References 5 publications

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“…Similar effect was previously reported by Kouklin et al 23 , who suggested that the wave functions of electrons in the AAOtemplated semiconductor (CdS) nanowires penetrate a short distance into the surrounding alumina as a result of photo-assisted process, where electrons get trapped at the sub-band energy levels and can no longer contribute to conduction.…”

Section: Resultssupporting

confidence: 71%

Photoconductive properties of Bi2S3 nanowires

Andzane

Kunakova

Varghese

et al. 2015

Journal of Applied Physics

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The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls

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Section: Resultssupporting

confidence: 71%

Photoconductive properties of Bi2S3 nanowires

Andzane

Kunakova

Varghese

et al. 2015

Journal of Applied Physics

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“…Zinc selenide is one of the promising materials for the use in optoelectronic devices such as blue laser diodes [3], light-emitting diodes (LEDs) [4], optically controlled switches [5] and tunable mid-IR laser sources for remote-sensing applications [6]. Since the dimension of materials is believed to determine the optical, electronic, thermal and mechanical properties control of the size of the particles is very crucial [7]. In recent years, various types of 1D nanostructure, such as III-V, and II-VI group compounds, have been synthesized [8].…”

Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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“…ZnSe is ideal material for blue-green laser diodes [1] [2], mid-IR laser sources for remote sensing applications [5], and in optically controlled switching devices due to its large photo resistivity [6]. Zinc selenide thin films had been fabricated by photochemical deposition (PCD) [7], chemical bath deposition (CBD) [8] [9] and electrochemical deposition (ECD) [10], but all these methods have Materials Sciences and Applications their own drawbacks including higher annealing temperatures for PCD, controlling rate of reaction for CBD and the use of only conductive substrates for ECD [7].…”

Section: Introductionmentioning

confidence: 99%

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Alghamdi¹

2017

MSA

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Polycrystalline thin films of ZnSe and ZnS x Se 1−x have been deposited on glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from bis(diethyldiselenocarbamato)zinc(II) and a 1:1 and 1:0.75 mixtures of bis(diethyldiselenocarbamato)zinc(II) and bis(diethyldithiocarbamato)zinc (II) as precursors. All films were characterized by p-XRD, SEM, EDX, Raman spectroscopy, photoluminescence (PL and UV/Vis spectroscopy. The band gap of pure ZnSe thin films was found to be 2.25 whereas the band gap of ZnS x Se 1−x films varied from 2.55 to 2.66 eV depending on the sulfur content in the films. PL emission spectra showed a clear blue shift for ZnS x Se 1−x films compared to ZnSe due to the sulphur content in the films which increase the band gap. The band gap of ZnSSe can be controlled by sulfur to selenium ratio in the alloy. The morphology of the ZnSe thin films changed from small randomly shaped crystallites to triangles whereas the morphology of ZnS x Se 1−x was mainly based on cuboids.

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Giant photoresistivity and optically controlled switching in self-assembled nanowires

Cited by 132 publications

References 5 publications

Photoconductive properties of Bi2S3 nanowires

Photoconductive properties of Bi2S3 nanowires

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

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Giant photoresistivity and optically controlled switching in self-assembled nanowires

Cited by 132 publications

References 5 publications

Photoconductive properties of Bi2S3 nanowires

Photoconductive properties of Bi2S3 nanowires

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Composition and Band Gap Controlled AACVD of ZnSe and ZnS&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;1-x&lt;/sub&gt; Thin Films Using Novel Single Source Precursors

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Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors