Giant topological Hall effect in correlated oxide thin films

Vistoli, Lorenzo; Wang, Wenbo; Sander, Anke; Zhu, Qiuxiang; Casals, Blai; Cichelero, Rafael; Barthélémy, A.; Fusil, S.; Herranz, G.; València, S.; Abrudan, R.; Weschke, E.; Nakazawa, Kazuki; Kohno, Hiroshi; Santamarı́a, J.; Wu, Weida; Garcia, Vincent; Bibès, Manuel

doi:10.1038/s41567-018-0307-5

Cited by 145 publications

(153 citation statements)

References 38 publications

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“…We note that all published transport results comprising similar phenomenology [17][18][19][20][21][22][23][24] could be well explained using our model introducing two coexisting ferromagnetic orders. Moreover our explanation successfully describes every electrical transport feature, including dependence on magnetic field, gate voltage, temperature and thin film parameters such as doping level and film thickness, without the need to speculate about new topological physics.…”

supporting

confidence: 76%

“…The anomalous Hall effect (AHE), despite being first reported over a hundred years ago, [1] remains of significant modern research interest as its investigation in novel magnetic materials continues to yield rich physics. Recent examples of this are the quantum anomalous Hall effect [2][3][4][5][6][7][8][9][10][11][12], which offers both potential for metrological applications [13,14] and for the academic study of axion electrodynamics [5,12,15,16], as well as reports on alleged contribution to the Hall effect [17][18][19][20][21][22][23][24] associated with skyrmion magnetic textures.…”

mentioning

confidence: 99%

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Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

Fijalkowski¹,

Hartl²,

Winnerlein³

et al. 2020

Phys. Rev. X

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Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases. arXiv:1912.02766v1 [cond-mat.mes-hall]

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supporting

confidence: 76%

mentioning

confidence: 99%

Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

Fijalkowski¹,

Hartl²,

Winnerlein³

et al. 2020

Phys. Rev. X

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“…enhancement in lightly-doped CMO, our work sheds light on the recent observation of a giant topological Hall effect in this material 21 , and suggests strategies for its realization in other systems. To the best of our knowledge, our study on CCMO is the first case where a dramatic distinction of charge carriers has been unambiguously identified as tracing back not to merely oneelectron band structure or electron-correlation effects like in pnictides, for example, but to peculiarities of electron-boson coupling.…”

Section: Discussionmentioning

confidence: 60%

Electron-polaron dichotomy of charge carriers in perovskite oxides

et al. 2020

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Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO 3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO 3 . We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO 3 and suggests strategies to engineer quantum matter from TMOs.

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“…The THE was widely studied in the skyrmions hosting B20 compounds [7,8,19,[21][22][23][24]. It was also observed in other systems possessing NCP spin structures, e.g., pyrochlore lattices [25,26], antiferromagnets [27,28], spin glasses [29,30], and correlated systems such as oxide thin films [31,32].…”

Section: Introductionmentioning

confidence: 97%

Detection of antiskyrmions by topological Hall effect in Heusler compounds

Kumar

Reehuis

et al. 2020

Phys. Rev. B

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Heusler compounds having D2d crystal symmetry gained much attention recently due to the stabilization of a vortex-like spin texture called antiskyrmions in thin lamellae of Mn1.4Pt0.9Pd0.1Sn as reported in the work of Nayak et al. [Nature 548, 561 (2017)]. Here we show that bulk Mn1.4Pt0.9Pd0.1Sn undergoes a spin-reorientation transition from a collinear ferromagnetic to a non-collinear configuration of Mn moments below 135 K, which is accompanied by the emergence of a topological Hall effect. We tune the topological Hall effect in Pd and Rh substituted Mn1.4PtSn Heusler compounds by changing the intrinsic magnetic properties and spin textures. A unique feature of the present system is the observation of a zerofield topological Hall resistivity with a sign change which indicates the robust formation of antiskyrmions. I. INTRODUCTIONTopological magnetic textures show promise in many areas of technology, such as racetrack memory [1,2] and neuromorphic computing [3,4], due to the unique transport properties that allow for efficient manipulation [5,6] and detection [7,8] of the magnetic textures. This is a consequence of the real space Berry curvature of the topological texture that can be tuned by the electronic structure [9,10]. One such topological texture is the skyrmion [11,12] which is found in chiral magnets [13] with a unit integer topological charge.Recently antiskyrmions (aSKs) [14], the anti-particles of the skyrmions, were stabilized in thin lamellae of the tetragonal inverse Heusler compound Mn1.4Pt0.9Pd0.1Sn for a broader field range and even above room temperature [15]. In this compound (D2d symmetry class), the Dzyaloshinskii-Moriya interaction (DMI) is anisotropic where the DM vectors along the x and y directions in the basal plane are of opposite sign and hence cause the stability of the aSKs [16]. The in-plane winding of the spin texture for an aSK is anisotropic with an opposite topological charge as compared to that of the azimuthally symmetric Bloch and Néel skyrmion of the same charge [17]. The topological winding induces a real space Berry curvature that strongly influences all transport properties [18]. The topological Hall effect (THE) is one such electrical transport property that has been intrinsically linked to the skyrmions [8]. The THE results in a further component of the total Hall signal, in addition to the normal Hall and the magnetization-scaled anomalous Hall components [19]. It arises due to the emergent magnetic field which is a result of the finite Berry phase contributions from either II. EXPERIMENT Polycrystalline ingots of Mn1.4Pt1-xPdxSn (x = 0, 0.1 … 0.3) and Mn1.4Pt1-yRhySn (y = 0.1, 0.2 … 0.8) with the stoichiometric amounts of constituent elements were prepared by arcmelting in the presence of Ar atmosphere. The synthesized ingots were sealed in an evacuated quartz tube and annealed at 873 K (Pd-substituted samples) and 1073 K (parent compound Mn1.4PtSn and Rh-substituted samples) for 7 days followed by quenching into an ice-water mixture. The phase purity and the cryst...

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Giant topological Hall effect in correlated oxide thin films

Cited by 145 publications

References 38 publications

Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

Electron-polaron dichotomy of charge carriers in perovskite oxides

Detection of antiskyrmions by topological Hall effect in Heusler compounds

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