We describe a new in operando approach for the investigation of heterogeneous processes at solid/liquid interfaces with elemental and chemical specificity which combines the preparation of thin liquid films using the meniscus method with standing wave ambient pressure X-ray photoelectron spectroscopy [Nemšák et al., Nat. Commun., 5, 5441 (2014)]. This technique provides information about the chemical composition across liquid/solid interfaces with sub-nanometer depth resolution and under realistic conditions of solution composition and concentration, pH, as well as electrical bias. In this article, we discuss the basics of the technique and present the first results of measurements on KOH/Ni interfaces.
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 ± 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.Quantum standards are the backbone of the system of measurement units. Already since 1990 all electrical units are based on flux quantization in units of ℎ 2 ⁄ , realized with the Josephson effect [1,2], and conductance quantization in units of 2 ℎ ⁄ , realized with the quantized Hall effect (QHE) [3,4]. With the revision of the international system of units, SI, in near future [5,6] also the realizations of the units of mass [7,8], the kilogram, and of temperature [9,10], the Kelvin, will utilize and rely on practical electric quantum standards, realizing the vision of Maxwell [11] and Planck [12] of a truly universal system of units. Both electrical quantum standards require temperatures of 4 K or lower for their operation, but since in addition the QHE only works in a magnetic field, it is practically impossible to combine both in one system. However, in ferromagnetic topological insulators like e.g. Cr-or V-doped (Bi,Sb)2Te3, the quantum anomalous Hall effect (QAHE) provides conductance quantization without a magnetic field [13][14][15][16], giving legitimate hope for a future quantum standard where all units based on ℎ and can be realized in one measurement setup.Yet, up to now the precision of the QAHE has not been tested with precision metrology methods, and in particular no uncertainty budgets were presented with the data published [17,18]. Indeed, the fact that very low measurement currents are required makes it difficult to reach uncertainties in the parts in 10 9 range as are routinely obtained in calibrations based on GaAs or graphene QHE devices. A main reason for the limitation of current is the robustness of the ferromagnetic state, which at this stage of development still requires temperatures in the mK-regime and does not tolerate current levels
Photoelectrochemical water splitting is a promising pathway for the direct conversion of renewable solar energy to easy to store and use chemical energy. The performance of a photoelectrochemical device is determined in large part by the heterogeneous interface between the photoanode and the electrolyte, which we here characterize directly under operating conditions using interface-specific probes. Utilizing X-ray photoelectron spectroscopy as a noncontact probe of local electrical potentials, we demonstrate direct measurements of the band alignment at the semiconductor/electrolyte interface of an operating hematite/KOH photoelectrochemical cell as a function of solar illumination, applied potential, and doping. We provide evidence for the absence of in-gap states in this system, which is contrary to previous measurements using indirect methods, and give a comprehensive description of shifts in the band positions and limiting processes during the photoelectrochemical reaction.
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases. arXiv:1912.02766v1 [cond-mat.mes-hall]
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