Glass Formation Range, Acid Resistivity, and Surface Charge Density of ZnO‐B₂O₃‐SiO₂ Passivation Glass Containing Al₂O₃

Abstract

The glass formation range in the system Zn0-B203-SiOt increases when 5% N 2 0 3 is added and then decreases with further Al2o3 additions. The acid resistivity of the glass also increases when AlzOJ is added. An observed increase in negative charge with A1 content until the system contains equal amounts of Al and Si (in forms of mole %) is explained by the formation of AIO; tetrahedra which substitute in the Si04 network. Alkaline-earth oxides cause a positive charge which compensates for the negative charge formed by &03. Antimony oxide and lanthanum oxide result in a negative charge in the glass. The formation of a negative or positive charge in the glass is thought to reflect the acidity or basicity of the glass, respectively.

Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification

“…As a small amount of Al 2 O 3 is built into the Al 2 O 3 -SiO 2 glass, Al 3+ ions will be mainly in the four-fold coordination [12][13][14][15][16][17]. In view of the much more structural resemblance between glassy SiO 2 and GeO 2 , the [AlO 4/2 ] À tetrahedrons will be more favorable in GeO 2 -based glasses because the ion radius of Ge 4þ ðR 4þ Ge ðCN ¼ 4Þ ¼ 0.39 Å where CN is the coordination number) matches that of Al 3þ ðR 3þ Al ðCN ¼ 4Þ ¼ 0.39ÅÞ better than that of Si 4þ ðR 4þ Si ðCN ¼ 4Þ ¼ 0.26ÅÞ [18].…”

Review of Bi2O3 based glasses for electronics and related applications

“…Low process temperatureOptical propertiesRadiation shieldingGood chemical durability 'Crystal' glass (see Table 1 1); (f) critical to avoid degradation; 45 (g) difficult combination of low process temperature and low thermal expansion, especially directly on chip, achieved through fillers; 18 (h) surface states in semiconductors also important 29,30 -reduce/avoid alkalis, which are mobile under electric field; (i) important on sensitive substrates/other layers, e.g. glass, metals, prefired TFRs; (j) critical for underwater applications 27 or for automotive.…”

“…As for ceramics, inorganic glasses, glass-ceramic and glaze materials have long gone beyond their traditional uses to address a wide array of modern technological challenges, in fields such as electrical engineering/ electronics/sensors, solar energy, 42,43 protective and decorative coatings, 20,[27][28][29][30][31][32][33][34][35] optics/optical telecommunications, 36,37 structural mechanics, 8 medical, 38 nuclear technology, 6,7 superconductors 39 and microfluidics. 40,41 Owing to performance and cost criteria, most standard glasses have relatively high softening points.…”

“…(i) hermetic sealing of packages, lamps, electrical feedthroughs and semiconductor devices 13,14,16,17,19,44,45 (ii) hermetic sealing and mechanical attachment of sensors 23,27 (Fig. 1) (iii) encapsulation of semiconductor devices 29,30 (iv) overglazing of automotive, packaging and architectural glass 33,34,46-48 (v) photovoltaic (PV) solar cell technology -conductors and contacts 42,43,49-53 (vi) enamelling of aluminium in architecture and home appliances 35,54-58 (vii) thick film (TF) electronics and other devices 21,22,24,25,27,59 on various substrates: 60 glasses for TF resistor (TFR), 61,62 conductor, 63,64 overglaze, dielectric 65 and sealing [15][16][17][18][19] materials (Fig. 1, the section on 'PbO in low melting frits and TF technology'); especially, special low firing compositions for fabrication of circuits and sensors on glass or metals.…”

“… *(a) Critical for sealing organic parts and semiconductors/thin film devices; (b) match not critical for thin layers on planar substrates – avoid tensile stresses; (c) stress relaxation→risk of signal drift; (d) depends on environment; protection of seal with organics sometimes possible; (e) often significant due to seal overlapping conductor tracks ( see Fig. 1); (f) critical to avoid degradation;45 (g) difficult combination of low process temperature and low thermal expansion, especially directly on chip, achieved through fillers;18 (h) surface states in semiconductors also important29, 30 – reduce/avoid alkalis, which are mobile under electric field; (i) important on sensitive substrates/other layers, e.g. glass, metals, prefired TFRs; (j) critical for underwater applications27 or for automotive 48.…”