It was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6 Ω/cm2. Bonding p-type silicon to n-type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial-like lattice continuity at the interface.

The glass formation range in the system Zn0-B203-SiOt increases when 5% N 2 0 3 is added and then decreases with further Al2o3 additions. The acid resistivity of the glass also increases when AlzOJ is added. An observed increase in negative charge with A1 content until the system contains equal amounts of Al and Si (in forms of mole %) is explained by the formation of AIO; tetrahedra which substitute in the Si04 network. Alkaline-earth oxides cause a positive charge which compensates for the negative charge formed by &03. Antimony oxide and lanthanum oxide result in a negative charge in the glass. The formation of a negative or positive charge in the glass is thought to reflect the acidity or basicity of the glass, respectively.

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Zinc borosilicate glass was electrophoretically deposited on silicon substrates in IPA solutions containing Y+++ and Mg++ additives. The deposition rate as well as the surface structure of deposits was greatly influenced by the Mg/Y ratio in the solution. Most of the deposits formed in the Y+++ ion‐rich solutions can be removed by rinsing, whereas the glass deposits formed in the Mg rich solutions are tightly attached to the substrates. Preferable deposits for filling of the moats between high voltage transistors are formed at normalMg/false(normalMg+Yfalse)=0.5 .

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