Glass Frit Wafer Bonding for Encapsulating Monolithic Integrated CMOS-MEMS Devices

Knechtel, Roy; Zellmer, Matthias; Schikowski, Marc; Behmueller, Martin; Buggenhout, Carl Van; Πετρόπουλος, Αναστάσιος

doi:10.1149/08605.0111ecst

Cited by 9 publications

(8 citation statements)

References 1 publication

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“…In parallel, conductive tracks or metallic lead-throughs for device signaling can be covered within the softened glass, preventing the need for processing complex and obviously more expensive vertical device signaling [ 48 , 49 ], with new questions arising related to hermeticity and device design and compatibility. Additionally, glass-frit bonding offers process flexibility due to a wide variety of suitable substrates including CMOS compatibility [ 50 ]. By application-related benchmarking of glass-frit bonding with alternative WLVP, glass-frit bonding can offer a good compromise of challenges, advantages, and disadvantages with respect to the specific features of the final application [ 39 ], required tooling, and the involved manufacturing processes.…”

Section: Discussionmentioning

confidence: 99%

“…For this work, glass-frit bonding [ 47 , 48 , 49 , 50 , 51 , 52 ] is the most reliable bonding method, allowing hermetic sealing over surface topologies several µm high. This bonding approach allows realizing hermetic electrical interconnects using existing metal lines without complex technological changes for the DW.…”

Section: Methodsmentioning

confidence: 99%

“…Hence, a thin film getter [58][59][60] is needed for this WLVP, using a highly efficient zirconium (Zr)-based thin-film getter from SAES Getters (SAES Getters S.p.A., Lainate (MI), Italy). For this work, glass-frit bonding [47][48][49][50][51][52] is the most reliable bonding method, allowing hermetic sealing over surface topologies several µ m high. This bonding approach allows realizing hermetic electrical interconnects using existing metal lines without complex technological changes for the DW.…”

Section: Wafer-level Vacuum Package Of Optical Memsmentioning

confidence: 99%

“…Hence, a hermetic bond technique is required which can tolerate high surface topologies of ≥2 µm. For this NIR-WLVP application, glass-frit bonding (which requires elevated process temperatures of 430–440 °C) was selected to be the best sealing method [ 46 , 47 , 48 , 49 , 50 , 51 , 52 ] in order to remain compatible with the fixed MEMS scanner process (see Table 2 for a comparison of alternative hermetic bonding techniques). Earlier work on glass-frit-bonded WLVP of AME75 processed MEMS mirrors resulted in 500 Pa internal pressure [ 52 ] (without getter) (in this work, <1 Pa was required).…”

Section: Introductionmentioning

confidence: 99%

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Wafer-Level Vacuum-Packaged Translatory MEMS Actuator with Large Stroke for NIR-FT Spectrometers

et al. 2020

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We present a wafer-level vacuum-packaged (WLVP) translatory micro-electro-mechanical system (MEMS) actuator developed for a compact near-infrared-Fourier transform spectrometer (NIR-FTS) with 800–2500 nm spectral bandwidth and signal-nose-ratio (SNR) > 1000 in the smaller bandwidth range (1200–2500 nm) for 1 s measuring time. Although monolithic, highly miniaturized MEMS NIR-FTSs exist today, we follow a classical optical FT instrumentation using a resonant MEMS mirror of 5 mm diameter with precise out-of-plane translatory oscillation for optical path-length modulation. Compared to highly miniaturized MEMS NIR-FTS, the present concept features higher optical throughput and resolution, as well as mechanical robustness and insensitivity to vibration and mechanical shock, compared to conventional FTS mirror drives. The large-stroke MEMS design uses a fully symmetrical four-pantograph suspension, avoiding problems with tilting and parasitic modes. Due to significant gas damping, a permanent vacuum of ≤3.21 Pa is required. Therefore, an MEMS design with WLVP optimization for the NIR spectral range with minimized static and dynamic mirror deformation of ≤100 nm was developed. For hermetic sealing, glass-frit bonding at elevated process temperatures of 430–440 °C was used to ensure compatibility with a qualified MEMS processes. Finally, a WLVP MEMS with a vacuum pressure of ≤0.15 Pa and Q ≥ 38,600 was realized, resulting in a stroke of 700 µm at 267 Hz for driving at 4 V in parametric resonance. The long-term stability of the 0.2 Pa interior vacuum was successfully tested using a Ne fine-leakage test and resulted in an estimated lifetime of >10 years. This meets the requirements of a compact NIR-FTS.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Wafer-level Vacuum Package Of Optical Memsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Wafer-Level Vacuum-Packaged Translatory MEMS Actuator with Large Stroke for NIR-FT Spectrometers

et al. 2020

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“…Hermeticity is a big benefit of the glass frit bonding, and therefore was intensively investigated. In these investigations 12,13 it was found that hermeticity issues often occur at the wafer edge, not all around, but typically at the left and and/or right side of wafers as shown in Fig. 17.…”

Section: Wafer Edge Aspects At Wafer Cap Wafer Bondingmentioning

confidence: 97%

The Importance of Wafer Edge in Wafer Bonding Technologies and Related Wafer Edge Engineering Methods

Knechtel

Schwarz

Dempwolf

et al. 2021

ECS J. Solid State Sci. Technol.

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Wafer bonding is an important process step in microsystem technologies for processing engineered substrates and for capping. Usually, the work and literature are focused on the bonding of the main wafer area. However, in recent years MEMS technologies have become more complex, with more process steps after wafer bonding. Accordingly, the wafer edge is becoming more and more important, and must be engineered. Methods for realizing this are discussed in this paper.

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Parametric model of resonant differential MEMS pressure sensors: enabling rapid structural optimization and automated layout design

Chen,

Gao,

et al. 2024

Meas. Sci. Technol.

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This paper aims to enhance the efficiency of sensor structural optimization design and achieve rapid performance evaluation and automatic layout drawing. To this end, we propose a parameterized model of a resonant differential MEMS pressure sensor (PRDMP). It can complete sensitivity calculations within 1 ms, far faster than traditional finite element analysis (FEA) methods. Additionally, compared to FEA results, its accuracy exceeds 90%. Furthermore, we reconstructed the uncertainty analysis part of PRDMP based on an error model. Compared to the Monte Carlo method used in existing studies, our method is faster and yields more stable results. Benefiting from the speed and accuracy of PRDMP, we achieved, for the first time, the multi-parameter collaborative automatic optimization of this sensor. Optimization results show that sensitivity increased by 36.2% while uncertainty decreased by 15.8%. Finally, we developed a sensor performance analysis and automatic layout drawing tool based on PRDMP, further enhancing design efficiency.

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Glass Frit Wafer Bonding for Encapsulating Monolithic Integrated CMOS-MEMS Devices

Cited by 9 publications

References 1 publication

Wafer-Level Vacuum-Packaged Translatory MEMS Actuator with Large Stroke for NIR-FT Spectrometers

Wafer-Level Vacuum-Packaged Translatory MEMS Actuator with Large Stroke for NIR-FT Spectrometers

The Importance of Wafer Edge in Wafer Bonding Technologies and Related Wafer Edge Engineering Methods

Parametric model of resonant differential MEMS pressure sensors: enabling rapid structural optimization and automated layout design

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