This paper reports on glass frit wafer bonding, which is a universally usable technology for wafer level encapsulation and packaging. After explaining the principle and the process flow of glass frit bonding, experimental results are shown. Glass frit bonding technology enables bonding of surface materials commonly used in MEMS technology. It allows hermetic sealing and a high process yield. Metal lead throughs at the bond interface are possible, because of the planarizing glass interlayer. Examples of surface micromachined sensors demonstrate the potential of glass-frit bonding.

This paper gives an introduction to glass frit wafer bonding, which is an universally useable technology for encapsulation of microsystems, especially surface micromechanical sensors on wafer level. After a process description, some mechanical as well as electrical characteristics of glass frit bonded wafers are discussed and applications are shown

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CMOS-MEMS integration is getting a more and more important topic with growing expectations and requirements on the function and performance of micro sensors [1]. The integration of ASICs and memories to MEMS sensor structures allows by calibration the compensation of side effects (temperature influences, stress influences,…) and manufacturing tolerances. Thus, very accurate sensors, at acceptable cost structures for high volume applications become feasible. These high volume applications are often for mobile devices or other use cases where the form factor is important as well – here the wafer level integration and the wafer level packaging (wafer bonding) also offer many opportunities.

In this paper a test structure is introduced, which allows the evaluation of the quality of an anodic bond interface in terms of surface energy. It is based on the creation of small non-bonded areas in the vicinity of small steps in the bond interface. Using finite element analysis simulations it was possible to calculate the surface energy of the monitored bonding processes. The test structure was used to investigate the influence of anodic bonding parameters (temperature and voltage) on the surface energy