Glow Discharge Phenomena in Plasma Etching and Plasma Deposition

Vossen, J. L.

doi:10.1149/1.2129029

Cited by 157 publications

(46 citation statements)

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“…Koenig and Maissel [7] used simple arguments, such as constant ion density near both electrodes, Child's law, and absence of collisions in the sheaths, to conclude that the inverse scaling of an electrode's voltage and surface area follows a power law with a scaling exponent of 4. A number of later experimental works implied a much lower exponent [8][9][10][11]. We are presently interested in the cylindrical geometry where some experiments and models do exist [10,12].…”

Section: Coaxial Capacitively Coupledmentioning

confidence: 99%

Plasma processing of large curved surfaces for superconducting rf cavity modification

Upadhyay

Popović

et al. 2014

Phys. Rev. ST Accel. Beams

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Plasma-based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. We have demonstrated surface layer removal in an asymmetric nonplanar geometry, using a simple cylindrical cavity. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (rf) circuit elements, gas pressure, rf power, chlorine concentration in the Cl 2 =Ar gas mixtures, residence time of reactive species, and temperature of the cavity. Using variable radius cylindrical electrodes, large-surface ring-shaped samples, and dc bias in the external circuit, we have measured substantial average etching rates and outlined the possibility of optimizing plasma properties with respect to maximum surface processing effect.

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Section: Coaxial Capacitively Coupledmentioning

confidence: 99%

Plasma processing of large curved surfaces for superconducting rf cavity modification

Upadhyay

Popović

et al. 2014

Phys. Rev. ST Accel. Beams

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“…The thickness of the damaged region beneath the top surface has been obtained by analyzing DLTS spectra and found to be about 200A. 5. It has been found that the film, which was formed during RIE, is composed of carbon, oxygen, and fluorine from the plasma, Si from the substrate, and iron, chromium, and nickel from the cathode.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Reactive Ion Etched Silicon Surface by Deep Level Transient Spectroscopy

Matsumoto

Sugano

1982

J. Electrochem. Soc.

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The surface defects introduced on silicon surfaces by reactive ion etching are characterized by analyzing the pulseheight dependence of DLTS spectra, in which the transient response of the occupation of carriers in discrete levels is taken into account by using the Fermi-Dirac distribution function in the calculation. The material used as the cathode table is shown to be a source of the contaminants on the reactive ion etched silicon (RIE-Si) surface, and a correlation between the characteristics of electron traps and the cathode material is found. A model of the surface region of RIE-Si substrate is proposed, which includes an interfacial layer on the substrata and a damaged region near the top surface containing carrier traps. The calculated value of about 200A for the thickness of the damaged region shows good agreement with measured thicknesses of about 300~ for the case of RIE using polyimide-coated cathode.Reactive ion etching (RIE) is very useful for fabricating silicon devices and integrated circuits, in which the minimum dimension is 1 ~m or less because of the selectivity and the directionality of RIE.Carbon tetrafluoride (CF4) is most commonly used as the etching gas because it is neither toxic nor reactive in normal, state.However, the surface of the reactive-ion-etched silicon (RIE-Si) is covered with fluorocarbon polymer film (1), grown by the deposited fragments such as ions like CF3 +, CF2 +, CF +, C + , and F +, radicals like F*, and materials sputtered from the inner wall of the chamber, and thought to contain many traps. Furthermore the physical properties of the surface, such as the thickness of the modified surface region and the characteristics of the traps, are still unknown.In consequence, it is necessary to establish a methodology to characterize the electrical properties of the surface of RIE-Si. The deep level transient spectroscopy (DLTS), proposed by Lang (2), has been used in this work as one of the most useful and sensitive methods for this purpose.The spatial distribution of traps in the surface region of the substrata can be obtained by differentiating the net DLTS signal by the thickness of the depletion layer (3). This method, however, cannot be applied if the thickness of the region, in which traps are distributed, is very thin and of the order of 102A, as in the case of RIE-Si, because of the insufficient spatial resolution power of this method.The objective of this l~aper is, therefore, to propose an extension of the DLTS technique to the measuremerit of the electrical properties of the surface defects of silicon subjected to the RIE treatment. Here, in order to avoid disturbance by high tem~oerature processes, Schottky diodes are used for the DLTS analysis. Model for Surface Region of RIE-SiA modeZ of RIE-Si surface.--It has been reported that the reactive ion etching using CF4 gas is accompanied by simultaneous deposition of a polymer film composed of carbon and fluorine (4). The deposition of the polymer film reduces the etch rate of silicon, but it does not entirely stop ...

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“…Using inductively coupled tubular reactors prevents uniform coupling to the power supply while operating at low pressure (P 5 1 Torr). However, uniform coupling increases with increasing working pressure [25].…”

Section: External Electrode Reactors With An Rf Power Supplymentioning

confidence: 93%

Plasma Polymerized Films for Sensor Devices

Hiratsuka

Karube

2000

Electroanalysis

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Miniaturization with semiconductor microfabrication or micromachining techniques is one of the main concerns in sensor technologies. For the combination of sensor and microelectronics technology, polymers should be fabricated in a mass‐producible and miniaturization‐conscious manner as an interface. The polymers fabricated in conventional manners could have potential problems, e.g., obtaining thin (<1 µm) and homogeneous films. Plasma‐polymerized films, which are made in a glow discharge or plasma in a vapor phase, offer a new alternative. This review describes the several characteristics, properties, and applications of plasma‐polymerized films in both chemical and biological fields.

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Glow Discharge Phenomena in Plasma Etching and Plasma Deposition

Cited by 157 publications

References 0 publications

Plasma processing of large curved surfaces for superconducting rf cavity modification

Plasma processing of large curved surfaces for superconducting rf cavity modification

Characterization of Reactive Ion Etched Silicon Surface by Deep Level Transient Spectroscopy

Plasma Polymerized Films for Sensor Devices

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