Glucose Sensing by an Enzyme-modified ZnO-based FET

Koike, Kazuto; Mori, Yuina; Sasa, Shigehiko; Hirofuji, Yuichi; Yano, Mitsuaki

doi:10.1016/j.proeng.2016.11.153

Cited by 15 publications

(9 citation statements)

References 8 publications

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“…To immobilize GOD on the ion-sensitive gate electrode, ionic binding, covalent binding, and inclusion methods have been developed. Among them, the covalent bonding method is mostly used for ISFET-type and EGFET-type biosensors, similar to the cases of our ZnO-based ISFET-type [15,16] and EGFET-type glucose sensors [21]. Although the number is limited, however, the inclusion method is also applied as reported by You et al [22].…”

Section: Introductionmentioning

confidence: 75%

“…These potentiometric biosensors employed Si-based ISFETs; however, other ISFETs based on diamond [11], graphene [12,13], and AlGaN/GaN [14] have been applied recently to exploit relevant advantages. We also reported immuno-sensors [15] and glucose sensors [15,16] using ZnO-based ISFETs on glass substrates to exploit advantages such as transparency and stable operation under visible illumination.…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of an Extended Gate Field-Effect Transistor for Glucose Sensing Using an Enzyme-Containing Silk Fibroin Membrane as the Bio-Chemical Component

et al. 2020

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The characteristics of a glucose sensor based on an ion-sensitive TiO2/Ti extended gate electrode field-effect transistor (EGFET) are reported. A glucose oxidase-containing silk fibroin membrane was immobilized on a TiO2/Ti surface as the bio-sensing component. This EGFET-type biosensor was estimated to be able to detect a glucose concentration as low as 0.001 mg/mL in an aqueous electrolyte, which enables the sensing of glucose in the saliva and sweat. The endurance of this sensor was also examined, and it was found that the retention time of the original sensitivity for repeated use at room temperature was more than 30 days, with a high heat tolerance temperature close to 60 °C.

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Section: Introductionmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Characteristics of an Extended Gate Field-Effect Transistor for Glucose Sensing Using an Enzyme-Containing Silk Fibroin Membrane as the Bio-Chemical Component

et al. 2020

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“…interface between Si3N4 and substrate Si [40][41][42]. Therefore, Si3N4 is preferred as the sensitive layer to obtain better device performance.…”

Section: Materials Analysis Of a Gate Dielectric Layermentioning

confidence: 99%

“…Compared with other high-k sensitive film materials, Si 3 N 4 has many advantages. For instance, it is free from interference impurities, the thickness of the film can be controlled, and no transition layer is required because of favorable conditions in the interface between Si 3 N 4 and substrate Si [40][41][42]. Therefore, Si 3 N 4 is preferred as the sensitive layer to obtain better device performance.…”

Section: Analysis Of Semiconductor Materialsmentioning

confidence: 99%

Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor

Wang

Yang

2020

Sensors

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pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring. However, their performance is affected by many factors, such as gate dielectric material, channel material and channel thickness. In order to obtain a pH sensor with high sensitivity and fast response, it is necessary to determine the appropriate equipment parameters, which have high processing cost and long production time. In this study, a nanostructured ion-sensitive field-effect transistor was developed based on the SILVACO technology computer-aided design (TCAD) simulator. Through experiments, we analyzed the effects of the gate dielectric material, channel material and channel thickness on the electrical characteristics of the nanostructured field-effect transistor. Based on simulation results, silicon nitride was selected as the gate dielectric layer, while indium oxide was chosen as the channel layer. The structure and parameters of the dual channel ion-sensitive field-effect transistor were determined and discussed in detail. Finally, according to the simulation results, a pH sensor based on the nanostructured ion-sensitive field-effect transistor was fabricated. The accuracy of simulation results was verified by measuring the output, transfer and pH characteristics of the device. The fabricated pH sensor had a subthreshold swing as low as 143.19 mV/dec and obtained an actual sensitivity of 88.125 mV/pH. In addition, we also tested the oxidation reaction of hydrogen peroxide catalyzed by horseradish peroxidase, and the sensitivity was up to 144.26 pA mol−1 L−1, verifying that the ion-sensitive field-effect transistor (ISFET) can be used to detect the pH of micro solution, and then combine the enzyme-linked assay to detect the concentration of protein, DNA, biochemical substances, biomarkers, etc.

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“…To suppress the noise from protein adsorption, electrochemical glucose detection using a metal oxide electrode has been reported. For example, gate surface potential shift was observed in response to glucose using a glucose oxidase-modified Ta 2 O 5 gate FET. , …”

Section: Introductionmentioning

confidence: 99%

Mesoporous Silica-Based Metal Oxide Electrode for a Nonenzymatic Glucose Sensor at a Physiological pH

Kajisa

Hosoyamada

2021

Langmuir

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To construct an electrochemical biosensing platform, we propose a glucose sensor whose electrode interface was modified by mesoporous silica (MPSi) as an electronic signal transmission interface between a biomarker and an electrochemical device. We develop an enzyme-free glucose sensor using an MPSicoated Ta 2 O 5 electrode in an actual biological fluid such as blood serum. MPSi includes a phenylboronic acid (PBA) molecule, in which glucose binds to a synthesized PBA−silane compound in an ca. 150 nm thick MPSi nanolayer, which changes the density of molecular charges of the PBA/glucose complex on the surface of MPSi. The charge changes derived from the equilibrium reaction of PBA with glucose lead to changes in surface potential of the Ta 2 O 5 electrode, and the surface potential changes depending on glucose concentration were measured by a potentiometric detector. As a result, a remarkable surface potential response was observed in the vicinity of neutral pH. K d = 6.0 mM and V max = 194 mV were obtained from the fitting curve of the Langmuir adsorption isotherm. Finally, we confirmed the glucose response of the PBA−MPSi-coated Ta 2 O 5 substrate in human serum by considering the influence of various contaminants. Although the surface potential change was suppressed by approximately one-third of that in the buffer system, it was suggested that it could be applied to measurements in the blood glucose concentration range. From the results of this study, it was clarified that blood-level glucose response could be monitored using a PBA−MPSi-coated Ta 2 O 5 substrate, which suggests the possibility of using a nonenzymatic glucose sensor as an alternative to the existing enzyme sensor.

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Glucose Sensing by an Enzyme-modified ZnO-based FET

Cited by 15 publications

References 8 publications

Characteristics of an Extended Gate Field-Effect Transistor for Glucose Sensing Using an Enzyme-Containing Silk Fibroin Membrane as the Bio-Chemical Component

Characteristics of an Extended Gate Field-Effect Transistor for Glucose Sensing Using an Enzyme-Containing Silk Fibroin Membrane as the Bio-Chemical Component

Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor

Mesoporous Silica-Based Metal Oxide Electrode for a Nonenzymatic Glucose Sensor at a Physiological pH

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