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We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O + ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm −1 when the ion fluence is at most 10 15 cm −2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.

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Articles you may be interested inStructure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition