Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Koike, Kazuto; Hama, Kenji; Nakashima, Ippei; Takada, Gen-you; Ogata, Kenichi; Sasa, Shigehiko; Inoue, M.; Yano, Mitsuaki

doi:10.1016/j.jcrysgro.2005.01.021

Cited by 179 publications

(125 citation statements)

References 11 publications

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“…24) (the latter value was obtained by using the correction of 2.56 eV derived from the calculation of rocksalt MgO). A linear extrapolation of the experimental bandgaps of wurtzite MgZnO alloy 25 suggests a value in the vicinity of 5.9 eV, consistent with our result. Similarly, inplane and out-of-plane lattice parameters of a ¼ 3.283 Å and c ¼ 5.095 Å , respectively, reported for wurtzite MgO based on extrapolation of experimental results on MgZnO, 26 are reasonably well-reproduced by the GGA to DFT calculations reported here (Table II).…”

Section: Resultssupporting

confidence: 91%

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Toporkov

Demchenko

Zolnai

et al. 2016

Journal of Applied Physics

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BexMgyZn1−x−yO semiconductor solid solutions are attractive for UV optoelectronics and electronic devices owing to their wide bandgap and capability of lattice-matching to ZnO. In this work, a combined experimental and theoretical study of lattice parameters, bandgaps, and underlying electronic properties, such as changes in band edge wavefunctions in BexMgyZn1−x−yO thin films, is carried out. Theoretical ab initio calculations predicting structural and electronic properties for the whole compositional range of materials are compared with experimental measurements from samples grown by plasma assisted molecular beam epitaxy on (0001) sapphire substrates. The measured a and c lattice parameters for the quaternary alloys BexMgyZn1−x with x = 0−0.19 and y = 0–0.52 are within 1%–2% of those calculated using generalized gradient approximation to the density functional theory. Additionally, composition independent ternary BeZnO and MgZnO bowing parameters were determined for a and c lattice parameters and the bandgap. The electronic properties were calculated using exchange tuned Heyd-Scuseria-Ernzerhof hybrid functional. The measured optical bandgaps of the quaternary alloys are in good agreement with those predicted by the theory. Strong localization of band edge wavefunctions near oxygen atoms for BeMgZnO alloy in comparison to the bulk ZnO is consistent with large Be-related bandgap bowing of BeZnO and BeMgZnO (6.94 eV). The results in aggregate show that precise control over lattice parameters by tuning the quaternary composition would allow strain control in BexMgyZn1−x−yO/ZnO heterostructures with possibility to achieve both compressive and tensile strain, where the latter supports formation of two-dimensional electron gas at the interface.

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Section: Resultssupporting

confidence: 91%

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Toporkov

Demchenko

Zolnai

et al. 2016

Journal of Applied Physics

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“…This shift suggests that ZnMgO can be formed by MOD using ZnO-MgO mixed MOD coating materials. It has been reported that the E g of ZnMgO follows Vegard's law [12]. Therefore, the E g of the ZnOMgO mixed thin film was compared using Vegard's law after measuring precise values of Mg content x 2 in the films by XRF.…”

Section: B Sintering Atmosphere and Mgo Content Dependence Of Opticamentioning

confidence: 99%

“…In this study, ZnOMgO mixed thin films were grown by the MOD method using mixed source materials of ZnO and MgO. In addition, ZnMgO is a semiconductor alloy that is promising material for band gap engineering [12]. The aim of the present study is to reveal the influence of ZnO-MgO mixed MOD coating materials on crystal growth and film properties of ZnO-MgO mixed thin films.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Nishimoto

Yoshino

Fujihara

et al. 2015

e-J. Surf. Sci. Nanotech.

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The influence of ZnO-MgO mixed metal-organic decomposition (MOD) coating materials have been investigated based on crystal growth and film properties of ZnO-MgO mixed thin films. These mixed thin films were grown on quartz substrates by dip coating and then sintered at 550• C. The film properties were evaluated using an atomic force microscope and a UV-VIS-NIR spectrophotometer, and by performing X-ray diffraction measurements. The growth mechanism is changed by MgO in ZnO-MgO mixed MOD coating materials. Mg segregated to the surface side in the ZnO-MgO mixed thin film, and some of the segregated Mg formed ZnMgO. In addition, the grain size of ZnO-MgO mixed thin films increased with an increase in the amount of MgO additive. Therefore, it can be concluded that grain boundary segregation of Mg enhances crystal growth. This enhancement of crystal growth by the intentional addition of an impurity can be applied to improving the characteristics of other semiconductor materials.

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“…The shift of the absorption edge in Mg x Zn 1-x O has been determined by several groups [11][12][13][14] and the data agree on the following behaviour:…”

Section: Introductionmentioning

confidence: 65%

Combinatorial growth of Mg_x Zn_1–xO epilayers by chemical vapor deposition

Lautenschlaeger¹,

Sann

Klar

et al. 2009

Physica Status Solidi (b)

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It was our aim to explore the growth of Mgx Zn1–x O epilayers on ZnO substrates using CVD at substrate temperatures around 650 °C which is considerably lower than necessary for the MOCVD growth which requires substrate temperatures above 900 °C. Metallic precursors (Zn, Mg) were used together with NO2 as oxygen precursor. The Mg content was determined from the shift of longitudinal optical phonon line as a function of the Mg composition. The properties of the films were investigated by low temperature photoluminescence. Epitaxial Mgx Zn1–x O films with fixed Mg compositions required an individual adjustment of the Mg reservoir temperature. We, therefore, explored the possibility of a combinatorial growth i.e. achieving a Mg gradient within one sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Cited by 179 publications

References 11 publications

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Combinatorial growth of Mg_x Zn_1–xO epilayers by chemical vapor deposition

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Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Cited by 179 publications

References 11 publications

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Combinatorial growth of Mgx Zn1–xO epilayers by chemical vapor deposition

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Combinatorial growth of Mg_x Zn_1–xO epilayers by chemical vapor deposition