Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Tham, W. H.; Ang, Diing Shenp; Bera, L. K.; Dolmanan, Surani Bin; Bhat, Thirumaleshwara N.; Kajen, R. S.; Tan, Hui Ru; Teo, Siew Lang; Tripathy, S.

doi:10.1116/1.4952403

Cited by 8 publications

(7 citation statements)

References 37 publications

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“…Ti/Al/W and Ti/Al/NiV have been reported as ohmic contacts that meet these requirements. W and NiV are considered to prevent Ti/Al layer from oxidation.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing

Yoshida

Egawa

2018

Physica Status Solidi (a)

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In this study, a Ti/Al/W ohmic contact and the factors that determine the optimal annealing temperature are investigated to obtain Au-free highelectron mobility transistor (HEMT) with a low thermal budget. The results show that a thin-Ti layer of 2.7 nm with a low specific contact resistance of 2.54 Â 10 À6 Ω Á cm 2 (0.358 Ω mm) is realized in 10 min at a low annealing temperature of 500 C. It is found that a thinner Ti layer leads to a lower annealing temperature because Al needs to diffuse through the Ti layer and make contact with AlGaN to obtain linear I-V characteristics. In addition, Ti is essential in removing the natural oxide film on AlGaN surface, and the minimum thickness of the Ti layer is 2 nm. The Au-free AlGaN/GaN HEMT on a silicon wafer shows comparable characteristics with the conventional Au-containing HEMT, which leads to low cost manufacturing of HEMTs in existing silicon-device fabrication lines.

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“…Ti/Al/W and Ti/Al/NiV have been reported as ohmic contacts that meet these requirements. W and NiV are considered to prevent Ti/Al layer from oxidation.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing

Yoshida

Egawa

2018

Physica Status Solidi (a)

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“…Despite large lattice mismatch, Si has become the most interesting candidate as a substrate for AlGaN/GaN high electron mobility transistor (HEMT) due to the availability of large size wafers (12-inch) and integration possibility with current silicon micro-electronics technology. 9 In addition, Si provides an acceptable thermal conductivity of 1.3W/ (cm. K) for nitride devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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“…With rapid advancements in processing technologies such as in the lithography process (double patterning, immersion and extreme ultra-violet), the critical dimensions of transistors can be shrunk to as small as 14 nm, as claimed by Intel in 2014 [3]. Compared to the number of transistors inside a microprocessor in the year 2000 which used 90 nm technology, a staggering increase in the number of transistors has been observed, going from thousands in the previous decade, to billions of transistors per IC to date [4].…”

Section: Time-of-flight Secondary Ion Mass Spectrometry (Tof-sims)mentioning

confidence: 99%

“…From equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12), it can be observed that by plotting the forward currentvoltage curve in the semi-log scale, the ∅ and n can be determined from the yintercept and the slope of the plot respectively. Hence, the Schottky Barrier height and ideality factor can be calculated respectively from equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13) and (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14):…”

Section: Schottky Contact Parameters Extraction (Current-mentioning

confidence: 99%

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Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

Tham¹

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"Moore's Law" states that the number of transistors in an integrated circuit will double approximately every two years. True to this observation, the number of transistors per Si IC indeed has doubled every 18 months since the 1970s. In accordance with the scaling trend predicted in Moore's Law, not only is the packing density of transistors increased but devices' performance are significantly improved as well. However as the size of transistors continuously shrinks, several issues such as the fundamental limitation of Si, quantum

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Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Abstract: Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

Cited by 8 publications

References 37 publications

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

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