2013
DOI: 10.1063/1.4792744
|View full text |Cite
|
Sign up to set email alerts
|

Gold ion implantation induced high conductivity and enhanced electron field emission properties in ultrananocrystalline diamond films

Abstract: We report high conductivity of 185 (Ω cm)−1 and superior electron field emission (EFE) properties, viz. low turn-on field of 4.88 V/μm with high EFE current density of 6.52 mA/cm2 at an applied field of 8.0 V/μm in ultrananocrystalline diamond (UNCD) films due to gold ion implantation. Transmission electron microscopy examinations reveal the presence of Au nanoparticles in films, which result in the induction of nanographitic phases in grain boundaries, forming conduction channels for electron transport. Highl… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
26
0

Year Published

2014
2014
2023
2023

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 31 publications
(27 citation statements)
references
References 31 publications
1
26
0
Order By: Relevance
“…The electrical conductivity and EFE properties obtained for d/ NCC I films are markedly better than those ever reported for other kind of conducting diamond materials, as shown in Table II. 16,[22][23][24][25] The robustness of these d/NCC materials is better illustrated by the lifetime measurement of a microplasma device using these materials as cathode. Since the cathode material experiences continuous bombardment by Ar-ions with high kinetic energies ($400 eV) in the microplasma device, it is considered as the harshest environment in the device applications.…”
Section: A)mentioning
confidence: 99%
“…The electrical conductivity and EFE properties obtained for d/ NCC I films are markedly better than those ever reported for other kind of conducting diamond materials, as shown in Table II. 16,[22][23][24][25] The robustness of these d/NCC materials is better illustrated by the lifetime measurement of a microplasma device using these materials as cathode. Since the cathode material experiences continuous bombardment by Ar-ions with high kinetic energies ($400 eV) in the microplasma device, it is considered as the harshest environment in the device applications.…”
Section: A)mentioning
confidence: 99%
“…While the N‐ion implantation/annealing process was shown being able to effectively enhance the EFE properties of diamond films, the explanation regarding the mechanism is not unambiguous, as N‐ions potentially replace C atom, resulting in donor‐doping effect. To more clearly illustrate the genuine mechanism of EFE enhancement process, Sankaran et al reported the betterment of EFE properties with increase in the Au implantation dosage. At a dosage of 1 × 10 17 ions/cm 2 , the authors recorded the highest conductivity of 185 Ω −1 cm −1 and superior EFE in UNCD films (( E 0 ) Au = 4.88 V/µm with high ( J e ) Au = 6.52 mA/cm 2 at an applied field of 8.0 V/µm) (Fig.…”
Section: Understanding Of the Enhancement Of Conductivity And Efe In mentioning
confidence: 99%
“…(c and d) The variation of the electron field emission properties (c) and the electrical conductivity (solid symbols) and turn‐on field (open symbols) (d) against the Au‐ion dose ((I) pristine, (II) 10 15 , (III) 10 16 , and (IV)10 17 ions/cm 2 ). The 10 17 ions/cm 2 Au‐ion implanted films possess the highest conductivity ( σ = 180 Ω −1 cm −1 ) and smallest turn‐on field ( E 0 = 4.88 V/μm) with largest EFE current density ( J e = 6.52 mA/cm 2 at 8.0 V/μm applied field) .…”
Section: Understanding Of the Enhancement Of Conductivity And Efe In mentioning
confidence: 99%
“…68 Afterwards, diamond films characterized by a conductivity up to a value of 185 Ω −1 cm −1 , a low turn-on field (4.88 V μm −1 ) and by a current density of 6.52 mA cm −2 at an applied field of 8.0 V μm −1 were produced by Au implantation. 69 The TEM image in patches at the grain boundaries of the polycrystalline films, and to the opening of effective conducting channels for electron transport. A slightly reduced improvement in both the electrical conductivity and electron emission was instead obtained when Cu-ions were implanted in the same type of ultrananocrystalline diamond layers.…”
Section: Nanodiamond Filmsmentioning
confidence: 99%