2004
DOI: 10.1557/proc-830-d6.7
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Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories

Abstract: In this work, we demonstrate a MISFET memory device that incorporates a monolayer of Langmuir-Blodgett (LB) deposited gold nanoparticles as floating gate charge storage elements. The FET device is fabricated on a SOI substrate using conventional silicon processing. The nanoparticle layer is separated from the channel area of the FET with a 5 nm thermal SiO2 layer and is isolated from Al gate contact with a LB-deposited organic insulator layer. The memory effect is tested using voltage pulses on the gate of the… Show more

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Cited by 5 publications
(7 citation statements)
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“…[3][4][5][6][7][8][9] However, achieving large-area ordering of AuNPs as required in these applications has proven to be challenging. [10][11][12][13] Methods in synthesis and self-assembly appear to play important roles in the quality of the self-assembled monolayers.…”
Section: ' Introductionmentioning
confidence: 99%
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“…[3][4][5][6][7][8][9] However, achieving large-area ordering of AuNPs as required in these applications has proven to be challenging. [10][11][12][13] Methods in synthesis and self-assembly appear to play important roles in the quality of the self-assembled monolayers.…”
Section: ' Introductionmentioning
confidence: 99%
“…The self-assembly of gold nanoparticles (AuNPs) into thin films has gained increasing interest because of its potential use in electronics, data storage, and plasmonic applications. [3][4][5][6][7][8][9] However, achieving large-area ordering of AuNPs as required in these applications has proven to be challenging. [10][11][12][13] Methods in synthesis and self-assembly appear to play important roles in the quality of the self-assembled monolayers.…”
Section: ' Introductionmentioning
confidence: 99%
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“…Due to the rapid advancement of nanotechnologies, the nanoscale electronic and optoelectronic products have attracted enormous attention in recent years, such as the nanocrystal memory which is made of a new metal-oxidesemiconductor ͑MOS͒ structure with metal or semiconductor nanocrystal embedded in the gate dielectric. [1][2][3][4][5][6][7][8][9] The nanocrystal memory has advantages of low power and high storage applications, [1][2][3][4] compared with conventional floatinggate electrically erasable programmable read-only memories. According to previous literature and related reports, the performance and characteristics of nanocrystal memories are strongly dependent on the nanocrystal size, shape, distribution, and position in the gate oxide.…”
mentioning
confidence: 99%
“…Translation of this promise into floating gate devices has been hampered by the inability to use CMOS (complementary metal oxide semiconductor) compatible processes for wafer-scale nanoparticle array formation, and for oxide layer deposition without disturbing nanoparticle ordering. 42,43 To realize CMOS-compatible scalable processes that can be readily adapted to fabricate next generation floating gate devices, we optimized processes for wafer-scale ordered 2D array formation and RF magnetron sputtering of an oxide layer on top of a MPN array.…”
mentioning
confidence: 99%