Graded band gap InGaAs diodes for terahertz applications

Prykhodko, K. H.; Zozulia, V. O.; Botsula, O. V.

doi:10.1109/ysf.2017.8126637

Cited by 8 publications

(4 citation statements)

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“…GazIn1-zAs-based diode structures proposed in [11] are taken into account. The diode doping profile a) and distribution of gallium fraction z in GazIn1 -zAs b) are shown in Fig.…”

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

“…Ensemble Monte-Carlo Technique (EMC) is carried out to describe the charge carrier dynamics in the device and determine energy and frequency characteristics of the diode modeling. All transport equations, material parameters and model peculiarities corresponded to [11,12]. A three-valley conduction band, the lower (Г) and upper X and L-valleys are taken into account.…”

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

“…Band-structure-related parameters used in the simulation, such as the energies at the symmetry points Г, L, X, the effective density of state masses in units of the free electron mass m 0 and the nonparabolicity parameter, are presented in Table 1. The main difference from [11] is the usage of the valence band represented by parabolic heavy hole zone ГV1. It is assumed that parameters of the GazIn1 -zAs semi-conductor compound vary with position in accordance to the z(x) law.…”

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

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Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Botsula¹,

Prykhodko²

2019

J. Nano- Electron. Phys.

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Development of millimeter and terahertz wave ranges is one of the main objectives of modern highfrequency electronic devices. However, there are not many active elements able to operate in these ranges. Transferred electron devices (TED) still remain a more widespread compact electromagnetic wave sources. But oscillation efficiency of TED operating in the submillimeter wave range is small and, in most cases, generation becomes impossible. Difficulties in obtaining maximum frequencies are mainly determined by the electron transition time from the upper valley to the lower one. The aim of the work is to investigate reduction of the transition time problem by using band to band impact ionization. The paper deals with charge transport in short diodes with InzGa1-zAs-based graded band structure with the active region length of 0.64 m. Doping concentration in the n-type active region was 10 16 …8•10 16 cm-3. Ensemble Monte-Carlo Technique is carried out to describe the charge carrier dynamics in the device. A three-valley conduction band and heavy hole band ГV1 are taken into account. It is shown a possibility of using localized impact ionization as an energy relaxation mechanism. Correlation between the number of acts of impact ionization and decrease in electron number in the upper va lleys are demonstrated. Oscillation efficiency of the diodes is calculated. It is shown that impact ionization can lead to increase in the maximum generation frequency. The proposed way of improving frequency properties due to modification of electron transfer near the anode contact can be applied to short structures and allows maximum generation frequencies.

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“…GazIn1-zAs-based diode structures proposed in [11] are taken into account. The diode doping profile a) and distribution of gallium fraction z in GazIn1 -zAs b) are shown in Fig.…”

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

Section: Diodes Structure and Their Numerical Modelmentioning

confidence: 99%

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Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Botsula¹,

Prykhodko²

2019

J. Nano- Electron. Phys.

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“…Here, the upper (lower) sign in the superscript denotes phonon absorption (emission). The calculation details correspond to [15][16][17][18]. Material parameters were chosen according to [19,20].…”

Section: Diode Structurementioning

confidence: 99%

Features of Noise Generation in Graded-Gap III Nitride-based Diodes

Prykhodko¹,

Plaksin²

2022

J. Nano- Electron. Phys.

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The paper reports the result of our research on graded-gap diodes with a cathode static domain as possible noise sources for different modern applications based on the use of THz wave frequencies. Such diodes represent a two-terminal n + -n  -nn + structure containing a cathode graded-gap layer with a band gap that increases from the cathode contact towards the n-region. We study GaN and AlN based diodes with InzGa1-zN and InzAl1-zN based graded-gap layers, respectively. It is shown that the localization of a strong electric field and low values of impact ionization threshold can be achieved by using a graded-gap layer with a narrow-gap material on the cathode. The diode simulation is performed using ensemble Monte Carlo technique. Noise generation is investigated numerically with time sampling of electric current over the time domain. The influence of scattering mechanisms acting on charge carriers on the noise properties of the diode is explored. Analyzing the noise power spectral density (NPSD), it is found that maximum NPSD can be observed in GaN diodes with InzGa1-zN layer, and the NPSD magnitude depends both on the size of the n --region (at a fixed diode length) and on the position of the graded-gap layer with respect to the end of the high resistance region (n -). It is established that polar phonon scattering and alloy-disorder scattering are the main mechanisms affecting the noise properties of the diodes. It is shown that the diodes demonstrate bias voltage regions where the dependence of NPSD on bias voltage is linear, and the value of NPSD increases by an order of magnitude.

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