Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications

Ma, Jun; Liang, Han-Bin; Pryor, R. A.; Cheng, Shui-Ming; Kaneshiro, Mike; Kyono, C. S.; Papworth, K.

doi:10.1109/92.645061

Cited by 24 publications

(2 citation statements)

References 17 publications

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“…The incorporation of a tri-step doping profile enables precise channel engineering, resulting in the enhancement in device performance by increasing the driving current, and mitigating Short Channel Effects as well as body effect. 71,72 It is important to note that graded doping profile-1 (N A1 = 1 × 10 16 cm −3 , N A2 = 1 × 10 15 cm −3 , N A3 = 1 × 10 14 cm −3 ) results in the maximum V th sensitivity and drain current sensitivity. While the I ON /I OFF ratio drifts more in favor of the doping profiles 2 and 4 than the doping profile 1.…”

Section: Vth Th No Biomolecule Thwith Biomoleculesmentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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This paper introduces a novel device called the gate all around engineered gallium nitride field effect transistor (GAAE-GANFET), designed specifically for label-free biosensing applications. This innovative gate-all-around engineering in GANFET integrates various device engineering techniques, such as channel engineering, gate engineering, and oxide engineering, to enhance biosensing performance. The channel engineering techniques refer to the use of a gallium nitride channel with a step-graded doping profile, divided into three distinct regions. In contrast, the gate engineering technique refers to the cylindrical split-gate-underlap architecture. The oxide engineering technique involves stacking Al2O3 and HfO2. Moreover, this biosensor incorporates two-sided gate underlap cavities that facilitate the immobilization of biomolecules. These open cavities not only provide structural stability but also simplify the fabrication process to a significant extent. The viability of this biosensor as a label-free biosensor has been evaluated using an antigen and an antibody from the Avian Influenza virus and DNA as the target biomolecules. The proposed analytical model and TCAD simulation results are in excellent agreement, demonstrating the reliability of the proposed device. Additionally, the biosensor's sensitivity, which depends on cavity length, doping concentration, gate metal work function, and temperature variation, has been thoroughly explored.

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Section: Vth Th No Biomolecule Thwith Biomoleculesmentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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“…Incorporating the channel engineering by using a horizontal tri‐step doping profile in channel not only increases the sensitivity but also improves the other characteristics such as improvement in the driving current [38], lowering of the Short Channel Effects and body effect [23]. It can be further seen that graded doping offers a much better sensitivity than non‐graded doping.…”

Section: Device and Simulator Specificationsmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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The Role of Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Vasileska

2002

phys. stat. sol. (b)

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PACS: 73.40.Qv; 85.40.Ry We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

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Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications

Cited by 24 publications

References 17 publications

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

The Role of Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

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