Gradient Doping of Mg in p-Type GaN for High Efficiency InGaN–GaN Ultraviolet Light-Emitting Diode

Kwon, Min‐Ki; Park, Il‐Kyu; Kim, Ja‐Yeon; Kim, Jeom-Oh; Kim, Bongjin; Park, Seong-Ju

doi:10.1109/lpt.2007.908659

Cited by 23 publications

(10 citation statements)

References 14 publications

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“…Interestingly, such parasitic emission at 385 nm was observed by other groups from Ga-and non-polar MQWs with EBL incorporated LEDs, which had been attributed to radiative recombination due to overflowing (or tunneling) electrons from the active region to p-type GaN layers. [31][32][33] However, the DQW LED did not exhibit the 385 nm peak even at higher current densities up to 400 A/cm 2 (Fig. 2(b)).…”

mentioning

confidence: 93%

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Akyol

Nath

Krishnamoorthy

et al. 2012

Applied Physics Letters

154

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In this letter, we experimentally demonstrate direct correlation between efficiency droop and carrier overflow in InGaN/GaN green light emitting diodes (LEDs). Further, we demonstrate flat external quantum efficiency curve up to 400 A/cm 2 in a plasma assisted molecular beam epitaxy grown N-polar double quantum well LED without electron blocking layers. This is achieved by exploring the superior properties of reverse polarization field of N-face polarity, such as effective carrier injection and higher potential barriers against carrier overflow mechanism. The LEDs were found to operate with a low ($2.3 V) turn-on voltage. V

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mentioning

confidence: 93%

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Akyol

Nath

Krishnamoorthy

et al. 2012

Applied Physics Letters

154

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“…It is also feasible to increase the lateral current flow by increasing the p-GaN layer thickness (t p ). Furthermore, the PNPNP-GaN will not have very abrupt interfaces because of the dopant diffusion, especially the Mg diffusion [39]. However, one still can maintain the PNPNP-GaN junctions by properly increasing the Si doping concentration and/or the n-GaN thickness.…”

Section: Resultsmentioning

confidence: 99%

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zhang¹,

Tan²,

Liu³

et al. 2013

Opt. Express

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This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3(6), 283-295 (2009

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“…[8][9][10][11][12][13][14][15] LEDs containing PC structure have been designed to efficiently couple light from the guided modes into air. 16,17 Therefore, the PC structure formed in the p-GaN layer is generally thinner than the thickness of p-GaN. [10][11][12][13][14] Forming a PC structure in the p-GaN layer requires the use of plasma dry etching, resulting in plasma damage to the p-GaN layer and sometimes even in the multiple quantum well ͑MQW͒ layer.…”

Section: Enhanced Emission Efficiency Of Gan / Ingan Multiple Quantummentioning

confidence: 99%

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Kwon

Kim

Park

et al. 2008

Applied Physics Letters

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Gradient Doping of Mg in p-Type GaN for High Efficiency InGaN–GaN Ultraviolet Light-Emitting Diode

Cited by 23 publications

References 14 publications

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

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