Gradient light-absorbing SiOx/Me coatings for display panels

Indutnyy, I. Z.; Shepeliavyi, P. E.; Michailovskaya, E. V.; Park, C. W.; Lee, J. B.; R., Y.

doi:10.1134/1.1486195

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…4(a) corresponds to a "quantum" cluster (with dimensions L at the order of the de Broglie wavelength of quasi-free electrons in a silicon cluster) incorporated into the SiO 2 matrix. The ground state energy in this cluster is E ¼ 2 / 2mL 2 , where m is the effective electron mass. Region 2 represents large silicon clusters surrounded by SiO 2 .…”

Section: Discussionmentioning

confidence: 99%

Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Novikov¹,

Gritsenko²

2011

Journal of Applied Physics

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The Si 2p x ray photoelectron spectra of SiO x with a different composition of 0 x 2 have been studied experimentally and theoretically. The SiO x films were prepared by low-pressure chemical vapor deposition from SiH 4 and N 2 O source at 750 C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiO x. V

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Section: Discussionmentioning

confidence: 99%

Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Novikov¹,

Gritsenko²

2011

Journal of Applied Physics

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“…These films are used as emitting media [1], light absorbing coating of screens [2], and solar cells [3]. In recent years, SiO x films are actively studied for their application as storage media in flash memory elements [4].…”

Section: Introductionmentioning

confidence: 99%

Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

Novikov

Gritsenko

2012

Phys. Solid State

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The short range order in amorphous SiO x (0 ≤ x ≤ 2) films has been studied by high resolution X ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO x (x ≤ 2). An intermediate model of the SiO x structure has been proposed. The measured photoelectron spectra of the SiO x (x ≤ 2) valence band indicate the presence of the silicon phase and silicon oxide.

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Gradient light-absorbing SiOx/Me coatings for display panels

Cited by 2 publications

References 4 publications

Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

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