Gradual electroforming and memristive switching in Pt/CuO<sub><i>x</i></sub>/Si/Pt systems

Wei, Ling; Shang, Dashan; Sun, J. R.; Lee, Shinbuhm; Sun, Zhelin; Shen, Baogen

doi:10.1088/0957-4484/24/32/325202

Cited by 14 publications

(5 citation statements)

References 23 publications

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“…A wide assortment of oxides, higher chalcogenides (compounds of S, Se, Te), halides, and other insulating materials have been used in CBRAM-like devices [19]. These compounds generally fall into three categories; (ion) electrolytes, such as AgI and related materials [20][21][22][23][24] and Ag-polymer [25]; mixed (ion-electron) conductors such as Ag 2+δ S [18,26,27], Cu 2−δ S [28,29], Cu 2−δ O [30][31][32], Ag-AsS x [33,34], Ag-GeSe x [9,35], Cu-GeSe x [36,37], Ag-GeS x [38,39], Cu-GeS x [38,40], Cu-GeTe [41], Cu-TCNQ [42,43], and a-Si [44][45][46]; and insulators that are not ordinarily considered as solid electrolytes such as SiO 2 [47][48][49][50], Al 2 O 3 [51,52], WO 3 [53][54][55][56], Ta 2 O 5 [57,58], TiO 2 [59], GeO x [60], ZrO 2 [61], HfO 2…”

Section: Materials Systemsmentioning

confidence: 99%

Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given-a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

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Section: Materials Systemsmentioning

confidence: 99%

Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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“…Similar to ECM, the VCM shows a bipolar and filamentary switching behavior. In recent years many experimental and theoretical studies have reported on the microscopic mechanisms of both the ECM and the VCM, such as probing the structure and composition, [9][10][11][12][13] observing shape evolution, [14][15][16][17] and modeling the connection/disconnection kinetics of the local conductive region. [18][19][20][21] Recently, Valov et al demonstrated that the redox processes are also involved and responsible for the resistance switching in some typical VCM devices, where anodic passivation of the reversible metal electrode takes place.…”

Section: Introductionmentioning

confidence: 99%

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces

Yang

Shang

Chai

et al. 2016

Phys. Chem. Chem. Phys.

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An important potential application of solid state electrochemical reactions is in redox-based resistive switching memory devices. Based on the fundamental switching mechanisms, the memory has been classified into two modes, electrochemical metallization memory (ECM) and valence change memory (VCM). In this work, we have investigated a solid state electrochemical cell with a simple Ag/MoO3-x/fluorine-doped tin oxide (FTO) sandwich structure, which shows a normal ECM switching mode after an electroforming process. While in the lower voltage sweep range, the switching behavior changes to VCM-like mode with the opposite switching polarity to the ECM mode. By current-voltage measurements under different ambient atmospheres and X-ray photoemission spectroscopy analysis, electrochemical anodic passivation of the Ag electrode and valence change of molybdenum ions during resistance switching have been demonstrated. The crucial role of moisture adsorption in the switching mode transition has been clarified based on the Pourbaix diagram for the Ag-H2O system for the first time. These results provide a fundamental insight into the resistance switching mechanism model in solid state electrochemical cells.

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“…Copper oxide can show both unipolar and bipolar resistive switching behaviors. In addition, there ismovement of positive Cu + ions or negative O 2− ions (or V o s); formation of filaments are responsible for resistive switching behavior in copperoxide-based ReRAMs [39,40]. Our device showed reproducible and reliable bipolar resistive switching.…”

Section: Resultsmentioning

confidence: 82%

Flexible resistive switching memory with a Ni/CuO_x/Ni structure using an electrochemical deposition process

Park

Lee

2016

Nanotechnology

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Flexible resistive switching memory (ReRAM) devices were fabricated with a Ni/CuO x /Ni structure. Fabrication involved simple and low-cost electrochemical deposition of electrodes and resistive switching layers on a polyethylene terephthalate substrate. The devices exhibited reproducible and reliable ReRAM characteristics. Bipolar resistive switching was observed in flexible Ni/CuO x /Ni-based ReRAM devices with low operation voltages. The reliability of the devices was confirmed by data retention, endurance, and cyclic bending measurements. The processes for fabrication of flexible ReRAM devices were based on simple-solution, bottom-up growth and they can be performed at low temperatures. Therefore, the methods presented in this work could be a viable solution for fabricating flexible non-volatile memory devices in the future.

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Gradual electroforming and memristive switching in Pt/CuO_x/Si/Pt systems

Cited by 14 publications

References 23 publications

Conductive bridging random access memory—materials, devices and applications

Conductive bridging random access memory—materials, devices and applications

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces

Flexible resistive switching memory with a Ni/CuO_x/Ni structure using an electrochemical deposition process

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Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems

Cited by 14 publications

References 23 publications

Conductive bridging random access memory—materials, devices and applications

Conductive bridging random access memory—materials, devices and applications

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces

Flexible resistive switching memory with a Ni/CuOx/Ni structure using an electrochemical deposition process

Contact Info

Product

Resources

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Gradual electroforming and memristive switching in Pt/CuO_x/Si/Pt systems

Flexible resistive switching memory with a Ni/CuO_x/Ni structure using an electrochemical deposition process