Grafting Molecular Properties onto Semiconductor Surfaces

Abstract

The sections in this article are Surface Electronic Properties Requirements of Molecular Surface Treatments Strategies to Control Surface Electronic Properties Controlling the Band‐bending ( V s ) and Surface Recombination Velocity ( SRV ) Controlling the Electron Affinity, χ Controlling the Work Function, Φ Strategy for Molecule Selection Organic and Inorganic Molecular Surface Treatments Inorganic Surface Treatments Organic Surface Treatments Correlation of Molecular Parameter with Changes in the Surface Electron Affinity Correlation of Molecular Parameters with Changes in the Band‐Bending Examples of Molecular Control over Optoelectronic Devices Summary Acknowledgments

Spectroelectrochemical Measurement of Surface Electrostatic Contributions to Colloidal CdSe Nanocrystal Redox Potentials

“…5,12,16,19,43,44 The impact of surface electric dipoles on semiconductor bandedge potentials can be described using the Helmholtz relationship (eq 2), where ΔV n is the potential change caused by the dipole layer, μ is the dipole moment, N ss is the dipole surface density (m −2 ), cos θ accounts for dipole orientation relative to the surface, ε 0 is the permittivity of free space, and ε d is the medium dielectric constant. 19,45,46 In our experiments where E F reflects the CB-edge potential, ΔV n in eq 2 can be equated with a change in E F .…”

Electronic Structure of Methoxy-, Bromo-, and Nitrobenzene Grafted onto Si(111)

“…The application perspectives lie in the engineering possibilities of inorganic semiconductor surfaces 1 and the development of novel hybrid inorganic/organic semiconductor devices. 2 In terms of semiconductor surface engineering, control of the surface state density, tailoring of the electron affinity, and chemical inertness are desirable.…”

“…In the past years, semiconductor surfaces terminated with organic compounds have attracted considerable interest due to the scientific importance of this heterointerface. The application perspectives lie in the engineering possibilities of inorganic semiconductor surfaces and the development of novel hybrid inorganic/organic semiconductor devices . In terms of semiconductor surface engineering, control of the surface state density, tailoring of the electron affinity, and chemical inertness are desirable.…”

“…In terms of semiconductor surface engineering, control of the surface state density, tailoring of the electron affinity, and chemical inertness are desirable. An overview of the modification of the surface properties of primarily binary semiconductors by organic surface treatments is given in ref . An impressive example for this approach is the tuning of the electron affinity of GaAs by about 1 eV through the adsorption of tartaric acid derivatives where the substituent X on the benzene group allows for a systematic modification of the molecular dipole .…”

Effect of Molecule−Molecule Interaction on the Electronic Properties of Molecularly Modified Si/SiOxSurfaces

“…Control over the surface chemistry and physics of a variety of solids can be achieved by the self-assembly of variously functionalized organic molecules onto their surfaces. , Silanes chemisorb onto an oxidized Si surface and form monolayers via self-assembly. , By systematically varying the functionality of these molecules, one can examine their effect on the surface's electronic properties [i.e., work function (WF), electron affinity (EA), band bending (BB), and surface recombination velocity]. For oxidized Si this has been demonstrated in a preliminary study of Cohen et al on Si and in a number of studies on other semiconductors …”