Grain boundaries in Thin-Film Polycrystalline GaAs Solar Cells: A Simulation Study

Kumari, Khushboo; Avasthi, Sushobhan

doi:10.1109/pvsc.2017.8366277

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…In the simulation model of Si crystal, the grain boundary was considered as two-dimensional interfaces and defect-concentrated layers [8] , likewise simulations for GaAs and ZnO [9][10] . Therefore, tail state defects and deep-level defects were introduced into the CdZnTe grain boundary.…”

Section: Silvaco Tcad Simulation Methods Description and Model Establ...mentioning

confidence: 99%

Influence of grain boundary on electric field distribution in CdZnTe crystal

Chen¹,

Guo²,

Tong³

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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Section: Silvaco Tcad Simulation Methods Description and Model Establ...mentioning

confidence: 99%

Influence of grain boundary on electric field distribution in CdZnTe crystal

Chen¹,

Guo²,

Tong³

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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“…Large grain size and grain boundary passivation are some of the most prevalent ways to achieve high-efficiency polycrystalline solar cells, and there is a plethora of literature available discussing their effect on polycrystalline III-V solar cells [264][265][266][267][268]. Traditionally, the deposition of large grain GaAs on low-cost substrates (such as plastic, glass, or metal) has been difficult, and therefore, innovative device designs are required to overcome the issue of small-grain sizes.…”

Section: Multicrystalline Iii-v Heterojunction Solar Cellsmentioning

confidence: 99%

Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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