2013 IEEE International Interconnect Technology Conference - IITC 2013
DOI: 10.1109/iitc.2013.6615565
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Grain boundary and surface scattering in interconnect metals

Abstract: This work addresses the classical size effect in interconnect metals and presents the theoretical background and quantification of the contributions of grain boundary and surface scattering to the observed resistivity increase in Cu. The results of experimental studies of Cu films and lines are reviewed. The extent to which the experimental data supports the theoretically expected interactions between surface and grain boundary scattering mechanisms will also be discussed.

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Cited by 3 publications
(3 citation statements)
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“…On the other hand, the distribution of resistivity of grain boundary should be derived based on Mayadas-Shatzkes (MS) model assuming that the grain boundary is the major path for electromigration. In MS model, the reflection coefficient of resistivity varies from 0.39 to 0.47 based on 95% confidence, as shown in (18) [18], where ρi is the mean value of resistivity, λ is the mean free path of electron, g is the actual grain size and R is the reflection coefficient.…”
Section: Afd-based Monte Carlo Simulation For Void Growth Rate and Ovmentioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, the distribution of resistivity of grain boundary should be derived based on Mayadas-Shatzkes (MS) model assuming that the grain boundary is the major path for electromigration. In MS model, the reflection coefficient of resistivity varies from 0.39 to 0.47 based on 95% confidence, as shown in (18) [18], where ρi is the mean value of resistivity, λ is the mean free path of electron, g is the actual grain size and R is the reflection coefficient.…”
Section: Afd-based Monte Carlo Simulation For Void Growth Rate and Ovmentioning
confidence: 99%
“…The reflection coefficient of resistivity is also set as normal distribution with mean value of 0.43 and sigma of 0.02 [18]. The basic parameters for the interconnect line are set as line length 100m, current density 1MA/cm 2 and temperature 600K for comparison purpose with technology node 45nm in [15].…”
Section: Afd-based Monte Carlo Simulation For Void Growth Rate and Ovmentioning
confidence: 99%
“…The features in the nanocondensate structure are known to dictate, as a rule, conditions for the additional relaxation of charge carriers and give rise to differences between the charge transfer parameters in the film and bulk materials. The electrophysical properties of nanocrystalline metal films are defined, first of all, with the scattering of conduction electrons by the film surface and grain boundaries, which is testified by the results of researches carried out by Ukrainian and foreign scientists [1][2][3][4][5]. Size effects in the conductivity of thin films and condensates were studied in works [3,4].…”
Section: Introductionmentioning
confidence: 99%