Grain‐Boundary‐Induced Drastic Sensing Performance Enhancement of Polycrystalline‐Microwire Printed Gas Sensors

Abstract

The development of materials with high efficiency and stable signal output in a bent state is important for flexible electronics. Grain boundaries provide lasting inspiration and a promising avenue for designing advanced functionalities using nanomaterials. Combining bulk defects in polycrystalline materials is shown to result in rich new electronic structures, catalytic activities, and mechanical properties for many applications. However, direct evidence that grain boundaries can create new physicochemical properties in flexible electronics is lacking. Here, a combination of bulk electrosensitive measurements, density functional theory calculations, and atomic force microscopy technology with quantitative nanomechanical mapping is used to show that grain boundaries in polycrystalline wires are more active and mechanically stable than single‐crystalline wires for real‐time detection of chemical analytes. The existence of a grain boundary improves the electronic and mechanical properties, which activate and stabilize materials, and allow new opportunities to design highly sensitive, flexible chemical sensors.

3D Chemical Cross‐Linking Structure of Black Phosphorus@CNTs Hybrid as a Promising Anode Material for Lithium Ion Batteries

“…Figure 5e shows the DFT calculated binding energies of LiP, Li 2 P, and Li 3 P on CNT sites are 5.22, 4.42, and 5.52 eV, which are much lower than that for binding to the N-CNT sites, which are 6.85, 7.73, and 7.74 eV, demonstrating the large chemisorption of Li x Ps on the N doping configurations in different Li x P clusters. [42] As a result, N-CNT can effectively improve the binding of Li x Ps species during the different stages of BP binding with lithium atom. Due to the excellent cycling stability of the BP@CNTs hybrids, it is necessary to quantify the contribution proportions of the diffusion-controlled intercalation and capacitance process.…”

“…The k 1 ν item represents the capacitivecontrolled contribution and the k 2 ν 1/2 item is diffusion-controlled contribution, which can resolve the capacitive and diffusive component quantitatively. [46] Theoretical Calculations: The atomic model parameter and binding energies were calculated using DFT under the Perdew-Berke-Ernzerhof generalized gradient approximation, [42,47] as implemented in the Materials Studio. A vacuum space of 20 Å was placed between adjacent layers to avoid periodic interactions for each monolayer substrate.…”

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…Moreover, the study of flexible electronics is no longer limited to a certain discipline, but has evolved into a new field of research that includes the integration of multiple disciplines such as electronics, materials science, biology, and systems engineering. The rapid development of materials science, micro/nano‐electronics, and information technology has brought opportunities for the practical application of flexible electronic technology . For example, research on smart wearable sensing system has evolved from film to reality in recent decades .…”

“…The rapid development of materials science, micro/nano-electronics, and information technology has brought opportunities for the practical application of flexible electronic technology. 183,186,187 For example, research on smart wearable sensing system has evolved from film to reality in recent decades. 188 This part mainly introduces the application of low-dimensional semiconductor materials in flexible FETs, PDs, and other fields.…”

Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes

“…Compared with piezoelectric injection, the air injection dispensing printing process has low ink quality and substrate flatness demands (as illustrated in the atomic force microscope (AFM) images of every layer), which adapts to relatively low precision, multilayer and cost-effective semiconductor formation. [28] Finally, the rapid laser annealing process (with an excimer XeCl 308 nm laser ultraviolet source with Adv. Optical Mater.…”